5秒后页面跳转
捷配首页

Datasheet > IRF6612
IRF6612 PDF预览

IRF6612

更新时间： 2024-01-08 00:40:54
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 199K
描述
HEXFET Power MOSFET

阅读下载

中文翻译

获取价格

IRF6612 技术参数

是否Rohs认证：符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, ISOMETRIC-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.7
Is Samacsys：N雪崩能效等级（Eas）：37 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (ID)：24 A
最大漏源导通电阻：0.0033 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3JESD-609代码：e1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：190 A认证状态：Not Qualified
表面贴装：YES端子面层：TIN SILVER COPPER
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRF6612 数据手册

 浏览型号IRF6612的Datasheet PDF文件第2页浏览型号IRF6612的Datasheet PDF文件第3页浏览型号IRF6612的Datasheet PDF文件第4页浏览型号IRF6612的Datasheet PDF文件第5页浏览型号IRF6612的Datasheet PDF文件第6页浏览型号IRF6612的Datasheet PDF文件第7页 
PD - 95842  
IRF6612/IRF6612TR1  
HEXFET® Power MOSFET  
VDSS  
30V  
RDS(on) max  
3.3mΩ@VGS = 10V  
4.4mΩ@VGS = 4.5V  
Qg(typ.)  
l Application Specific MOSFETs  
l Ideal for CPU Core DC-DC Converters  
l Low Conduction Losses  
30nC  
l Low Switching Losses  
l Low Profile (<0.7 mm)  
l Dual Sided Cooling Compatible  
l Compatible with existing Surface Mount  
Techniques  
DirectFET™ ISOMETRIC  
MX  
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)  
MX  
SQ  
SX  
ST  
MQ  
MT  
Description  
The IRF6612 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the  
lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with  
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-  
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows  
dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.  
The IRF6612 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switch-  
ing losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of  
processors operating at higher frequencies. The IRF6612 has been optimized for parameters that are critical in synchronous buck convert-  
ers including Rds(on), gate charge and Cdv/dt-induced turn on immunity to minimize losses in the synchronous FET socket.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
30  
±20  
Drain-to-Source Voltage  
V
Gate-to-Source Voltage  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
136  
I
I
I
I
@ TC = 25°C  
D
D
D
24  
@ TA = 25°C  
@ TA = 70°C  
A
19  
190  
DM  
2.8  
P
P
P
@TA = 25°C  
@TA = 70°C  
@TC = 25°C  
Power Dissipation  
D
D
D
1.8  
Power Dissipation  
W
89  
Power Dissipation  
0.022  
-40 to + 150  
Linear Derating Factor  
W/°C  
°C  
T
Operating Junction and  
J
Storage Temperature Range  
T
STG  
Thermal Resistance  
Parameter  
Typ.  
–––  
12.5  
20  
Max.  
45  
Units  
RθJA  
Junction-to-Ambient  
RθJA  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Case  
–––  
–––  
1.4  
RθJA  
°C/W  
RθJC  
–––  
1.0  
RθJ-PCB  
Junction-to-PCB Mounted  
–––  
Notes  through ˆ are on page 10  
www.irf.com  
1
02/02/04  
1234567...10

中文翻译

下载PDF

与IRF6612相关器件

型号 品牌 获取价格 描述 数据表
IRF66121PBF INFINEON

获取价格

 		RoHs Compliant
IRF6612PBF INFINEON

获取价格

 		RoHs Compliant
IRF6612PBF_15 INFINEON

获取价格

 		Ideal for CPU Core DC-DC Converters
IRF6612TR1 INFINEON

获取价格

 		HEXFET Power MOSFET
IRF6612TR1PBF INFINEON

获取价格

 		Power Field-Effect Transistor, 24A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Me
IRF6612TRPBF INFINEON

获取价格

 		RoHs Compliant
IRF6613 INFINEON

获取价格

 		HEXFET Power MOSFET
IRF6613PBF INFINEON

获取价格

 		Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Me
IRF6613TR1 INFINEON

获取价格

 		Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Me
IRF6613TR1PBF INFINEON

获取价格

 		Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Me

与IRF6612相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证