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IRF6612PBF PDF预览

IRF6612PBF

更新时间： 2024-02-01 06:19:06
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 249K
描述
RoHs Compliant

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中文翻译

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IRF6612PBF 技术参数

是否Rohs认证：符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, ISOMETRIC-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.7
Is Samacsys：N雪崩能效等级（Eas）：37 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (ID)：24 A
最大漏源导通电阻：0.0033 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3JESD-609代码：e1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：190 A认证状态：Not Qualified
表面贴装：YES端子面层：TIN SILVER COPPER
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRF6612PBF 数据手册

 浏览型号IRF6612PBF的Datasheet PDF文件第2页浏览型号IRF6612PBF的Datasheet PDF文件第3页浏览型号IRF6612PBF的Datasheet PDF文件第4页浏览型号IRF6612PBF的Datasheet PDF文件第5页浏览型号IRF6612PBF的Datasheet PDF文件第6页浏览型号IRF6612PBF的Datasheet PDF文件第7页 
PD - 97215  
IRF6612PbF  
IRF661TRPbF  
DirectFET™ Power MOSFET ꢂ  
Typical values (unless otherwise specified)  
ꢀRoHs Compliant ꢁ  
ꢀLead-Free (Qualified up to 260°C Reflow)  
ꢀApplication Specific MOSFETs  
ꢀIdeal for CPU Core DC-DC Converters  
ꢀLow Conduction Losses  
VDSS  
30V max ±20V max  
VGS  
RDS(on)  
2.5mΩ@ 10V 3.4mΩ@ 4.5V  
RDS(on)  
Qg tot Qgd  
30nC  
Qgs2  
Qrr  
Qoss Vgs(th)  
10nC  
2.9nC 8.1nC  
18nC  
1.8V  
ꢀHigh Cdv/dt Immunity  
ꢀLow Profile (<0.7mm)  
ꢀDual Sided Cooling Compatible ꢁ  
ꢀCompatible with existing Surface Mount Techniques ꢁ  
DirectFET™ ISOMETRIC  
MX  
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
Description  
The IRF6612PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-  
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The  
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and  
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing  
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,  
improving previous best thermal resistance by 80%.  
The IRF6612PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package  
inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/  
high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The  
IRF6612PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets.  
Absolute Maximum Ratings  
Parameter  
Max.  
30  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
136  
24  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V ꢃ  
Continuous Drain Current, VGS @ 10V ꢃ  
Continuous Drain Current, VGS @ 10V ꢄ  
Pulsed Drain Current ꢅ  
I
I
I
I
@ TC = 25°C  
D
D
D
@ TA = 25°C  
@ TA = 70°C  
A
19  
190  
37  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy ꢆ  
Avalanche Current ꢅ  
mJ  
A
19  
10  
9
8
7
6
5
4
3
2
1
0
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
I
= 24A  
D
I = 19A  
D
V
V
= 24V  
= 15V  
DS  
DS  
T
= 125°C  
J
T
= 25°C  
7
J
2
3
4
5
6
8
9
10  
0
10  
Q
20  
30  
40  
Total Gate Charge (nC)  
V
Gate -to -Source Voltage (V)  
G
GS,  
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage  
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage  
Notes:  
ꢁClick on this section to link to the appropriate technical paper.  
ꢂClick on this section to link to the DirectFET Website.  
ꢃSurface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
ꢄTC measured with thermocouple mounted to top (Drain) of part.  
ꢅRepetitive rating; pulse width limited by max. junction temperature.  
ꢆStarting TJ = 25°C, L = 0.20mH, RG = 25Ω, IAS = 19A.  
1
05/29/06  
1234567...10

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