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IRF6611PBF

更新时间： 2024-02-13 04:47:54
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
10页 262K
描述
DirectFET Power MOSFET

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中文翻译

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IRF6611PBF 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, ISOMETRIC-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.35
雪崩能效等级（Eas）：310 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：32 A最大漏源导通电阻：0.0026 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XBCC-N3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：220 A认证状态：Not Qualified
表面贴装：YES端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRF6611PBF 数据手册

 浏览型号IRF6611PBF的Datasheet PDF文件第2页浏览型号IRF6611PBF的Datasheet PDF文件第3页浏览型号IRF6611PBF的Datasheet PDF文件第4页浏览型号IRF6611PBF的Datasheet PDF文件第5页浏览型号IRF6611PBF的Datasheet PDF文件第6页浏览型号IRF6611PBF的Datasheet PDF文件第7页 
PD - 97216  
IRF6611PbF  
IRF6611TRPbF  
DirectFET™ Power MOSFET ‚  
l RoHs Compliant   
Typical values (unless otherwise specified)  
l Lead-Free (Qualified up to 260°C Reflow)  
l Application Specific MOSFETs  
l Ideal for CPU Core DC-DC Converters  
l Low Conduction Losses  
VDSS  
VGS  
RDS(on)  
RDS(on)  
30V max ±20V max  
2.0mΩ@ 10V 2.6mΩ@ 4.5V  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l High Cdv/dt Immunity  
37nC  
12nC  
3.3nC  
16nC  
23nC  
1.7V  
l Low Profile (<0.7mm)  
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
MX  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
Description  
The IRF6611PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the  
lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with  
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-  
niques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided  
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6611PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to  
reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC convert-  
ers that power high current loads such as the latest generation of microprocessors. The IRF6611PbF has been optimized for parameters that  
are critical in synchronous buck converter’s SyncFET sockets.  
Absolute Maximum Ratings  
Max.  
30  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
32  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
26  
@ TA = 70°C  
@ TC = 25°C  
A
150  
220  
310  
22  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
20  
15  
10  
5
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
I = 22A  
I
= 27A  
D
D
V
= 24V  
DS  
DS  
V
= 15V  
T
= 125°C  
J
T
2
= 25°C  
3
J
0
0
1
4
5
6
7
8
9
10  
0
10  
20  
30  
40  
50  
Q
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical On-Resistance vs. Gate Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.91mH, RG = 25Ω, IAS = 22A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
05/29/06  
1234567...10

中文翻译

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IRF6612TR1PBF INFINEON

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