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IRF6601TR1

更新时间： 2024-01-05 08:49:49
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
13页 265K
描述
Power Field-Effect Transistor, 26A I(D), 20V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

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IRF6601TR1 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：CHIP CARRIER, R-XBCC-N3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.84
雪崩能效等级（Eas）：65 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (ID)：26 A最大漏源导通电阻：0.0038 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XBCC-N3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：200 A认证状态：Not Qualified
表面贴装：YES端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRF6601TR1 数据手册

 浏览型号IRF6601TR1的Datasheet PDF文件第2页浏览型号IRF6601TR1的Datasheet PDF文件第3页浏览型号IRF6601TR1的Datasheet PDF文件第4页浏览型号IRF6601TR1的Datasheet PDF文件第5页浏览型号IRF6601TR1的Datasheet PDF文件第6页浏览型号IRF6601TR1的Datasheet PDF文件第7页 
PD - 94366F  
IRF6601/IRF6601TR1  
HEXFET® Power MOSFET  
VDSS  
20V  
RDS(on) max  
Qg  
30nC  
l Application Specific MOSFETs  
l Ideal for CPU Core DC-DC Converters  
l Low Conduction Losses  
l Low Switching Losses  
l Low Profile (<0.7 mm)  
3.8m @VGS = 10V  
Ω
5.0m @VGS = 4.5V  
Ω
l Dual Sided Cooling Compatible  
l Compatible with exisiting Surface Mount  
Techniques  
DirectFET™ ISOMETRIC  
MT  
Applicable DirectFET Package/Layout Pad (see p.9, 10 for details)  
SQ SX ST MQ MX  
MT  
Description  
The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to  
achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET  
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,  
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods  
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IM-  
PROVING previous best thermal resistance by 80%.  
The IRF6601 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction  
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the  
latest generation of processors operating at higher frequencies. The IRF6601 has been optimized for parameters that are  
critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6601  
offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
20  
Units  
V
VDS  
V
Gate-to-Source Voltage  
±20  
85  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TC = 25°C  
D
D
D
@ TA = 25°C  
@ TA = 70°C  
26  
A
20  
200  
3.6  
2.3  
42  
DM  
Power Dissipation  
P
P
P
@TA = 25°C  
@TA = 70°C  
@TC = 25°C  
D
D
D
Power Dissipation  
W
Power Dissipation  
Linear Derating Factor  
Operating Junction and  
0.029  
-40 to + 150  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Ambient  
Junction-to-Ambient  
Typ.  
–––  
12.5  
20  
Max.  
35  
Units  
RθJA  
RθJA  
–––  
–––  
3.0  
Junction-to-Ambient  
Junction-to-Case  
RθJA  
°C/W  
RθJC  
–––  
1.0  
RθJ-PCB  
Junction-to-PCB Mounted  
–––  
Notes  through ‡are on page 11  
www.irf.com  
1
03/09/05  
1234567...13

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