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IRF6610TRPBF

更新时间： 2024-02-15 10:12:41
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 237K
描述
Power Field-Effect Transistor, 15A I(D), 20V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2

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IRF6610TRPBF 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, ISOMETRIC-2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.76雪崩能效等级（Eas）：13 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：20 V最大漏极电流 (ID)：15 A
最大漏源导通电阻：0.0068 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N2JESD-609代码：e4
湿度敏感等级：3元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：120 A认证状态：Not Qualified
表面贴装：YES端子面层：Silver/Nickel (Ag/Ni)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRF6610TRPBF 数据手册

 浏览型号IRF6610TRPBF的Datasheet PDF文件第2页浏览型号IRF6610TRPBF的Datasheet PDF文件第3页浏览型号IRF6610TRPBF的Datasheet PDF文件第4页浏览型号IRF6610TRPBF的Datasheet PDF文件第5页浏览型号IRF6610TRPBF的Datasheet PDF文件第6页浏览型号IRF6610TRPBF的Datasheet PDF文件第7页 
PD - 97012  
IRF6610  
DirectFET™ Power MOSFET ꢀ  
Typical values (unless otherwise specified)  
ꢂLead and Bromide Free ꢁ  
VDSS  
20V max ±20V max  
VGS  
RDS(on)  
5.2mΩ@ 10V 8.2mΩ@ 4.5V  
RDS(on)  
ꢂLow Profile (<0.7 mm)  
ꢂDual Sided Cooling Compatible ꢁ  
ꢂUltra Low Package Inductance  
ꢂOptimized for High Frequency Switching ꢁ  
ꢂIdeal for CPU Core DC-DC Converters  
Qg tot Qgd  
11nC  
Qgs2  
1.3nC  
Qrr  
Qoss Vgs(th)  
3.6nC  
6.4nC 5.9nC  
2.1V  
ꢂOptimized for both Sync.FET and some Control FET  
applicationꢁ  
ꢂLow Conduction and Switching Losses  
ꢂCompatible with existing Surface Mount Techniques ꢁ  
DirectFET™ ISOMETRIC  
SQ  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)ꢁ  
SQ  
SX  
ST  
MQ  
MX  
MT  
MP  
Description  
The IRF6610 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the  
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows  
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6610 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching  
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors  
operating at higher frequencies. The IRF6610 has been optimized for parameters that are critical in synchronous buck operating from 12 volt  
buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.  
Absolute Maximum Ratings  
Max.  
20  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
15  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V ꢃ  
Continuous Drain Current, VGS @ 10V ꢃ  
Continuous Drain Current, VGS @ 10V ꢄ  
Pulsed Drain Current ꢅ  
I
I
I
I
@ TA = 25°C  
D
D
D
12  
@ TA = 70°C  
@ TC = 25°C  
A
66  
120  
13  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy ꢆ  
Avalanche Current ꢅ  
mJ  
A
12  
30  
25  
20  
15  
10  
5
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
I
= 15A  
I = 12A  
D
D
V
V
= 16V  
DS  
DS  
= 10V  
T
= 125°C  
J
T
= 25°C  
6
J
0
3
4
5
7
8
9
10  
0
2
4
6
8
10  
12  
14  
16  
Q
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
ꢄTC measured with thermocouple mounted to top (Drain) of part.  
ꢅRepetitive rating; pulse width limited by max. junction temperature.  
ꢆStarting TJ = 25°C, L = 0.18mH, RG = 25Ω, IAS = 12A.  
ꢁClick on this section to link to the appropriate technical paper.  
ꢀClick on this section to link to the DirectFET Website.  
ꢃSurface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
05/25/05  
1234567...10

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