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IRF6602

更新时间： 2024-11-26 22:31:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 192K
描述
HEXFET Power MOSFET

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中文翻译

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IRF6602 数据手册

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PD-94363C  
IRF6602/IRF6602TR1  
HEXFET® Power MOSFET  
VDSS  
20V  
RDS(on) max  
13mΩ@VGS = 10V  
19mΩ@VGS = 4.5V  
Qg  
12nC  
l ApplicationSpecificMOSFETs  
l Ideal for CPU Core DC-DC Converters  
l Low Conduction Losses  
l Low Switching Losses  
l Low Profile (<0.7 mm)  
l Dual Sided Cooling Compatible  
l Compatible with existing Surface Mount Techniques  
DirectFET™ ISOMETRIC  
MQ  
Applicable DirectFET Package/Layout Pad (see p.9, 10 for details)  
MQ  
SQ  
SX  
ST  
MX  
MT  
Description  
The IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to  
achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile.  
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment  
and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the  
manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in  
power systems, IMPROVING previous best thermal resistance by 80%.  
The IRF6602 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction  
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the  
latest generation of processors operating at higher frequencies. The IRF6602 has been optimized for parameters that are  
critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.  
Absolute Maximum Ratings  
Parameter  
Max.  
20  
Units  
V
VDS  
Drain-to-Source Voltage  
V
Gate-to-Source Voltage  
±20  
48  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TC = 25°C  
D
D
D
@ TA = 25°C  
@ TA = 70°C  
11  
8.9  
89  
A
DM  
Power Dissipation  
P
P
P
@TA = 25°C  
@TA = 70°C  
@TC = 25°C  
2.3  
1.5  
42  
W
D
D
D
Power Dissipation  
Power Dissipation  
Linear Derating Factor  
Operating Junction and  
0.018  
-40 to + 150  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Ambient  
Junction-to-Ambient  
Typ.  
–––  
12.5  
20  
Max.  
55  
Units  
Rθ  
Rθ  
Rθ  
Rθ  
Rθ  
JA  
–––  
–––  
3.0  
JA  
Junction-to-Ambient  
Junction-to-Case  
°C/W  
JA  
–––  
1.0  
JC  
Junction-to-PCB Mounted  
–––  
J-PCB  
Notes  through ‡are on page 11  
www.irf.com  
1
3/1/04  
1234567...11

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