Datasheet > IRF6608

IRF6608

更新时间： 2024-09-26 22:31:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	178K
描述
lHEXFET Power MOSFET

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IRF6608 数据手册

PD - 94727B

IRF6608

HEXFET^®Power MOSFET

l Application Specific MOSFETs

l Ideal for CPU Core DC-DC Converters

l Low Conduction Losses

V_DSS

30V

R_DS(on)max

9.0mΩ@V_GS= 10V

16nC

l Low Switching Losses

11mΩ@V_GS= 4.5V

l Low Profile (<0.7 mm)

l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount Techniques

DirectFET ISOMETRIC

Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details)

Description

The IRF6608 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TMpackaging to

achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET

package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,

infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and

processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous

best thermal resistance by 80%.

The IRF6608 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and

switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest

generation of processors operating at higher frequencies. The IRF6608 has been optimized for parameters that are critical in

synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6608 has been

optimized for parameters that are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in

the control FET socket.

Absolute Maximum Ratings

Max.

Parameter

Units

V_DS

Drain-to-Source Voltage

±12

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

I @ T_C= 25°C

I @ T_A= 25°C

I @ T_A= 70°C

100

Pulsed Drain Current

2.1

Power Dissipation

P @T_A= 25°C

1.4

P @T_A= 70°C

P @T_C= 25°C

0.017

-40 to + 150

Linear Derating Factor

W/°C

°C

Operating Junction and

Storage Temperature Range

STG

Thermal Resistance

Parameter

Typ.

–––

12.5

Max.

Units

R_θJA

Junction-to-Ambient

Junction-to-Ambient gj

R_θJA

–––

3.0

R_θJA

Junction-to-Ambient

°C/W

R_θJC

Junction-to-Case ij

–––

1.0

R_θJ-PCB

Junction-to-PCB Mounted

–––

Notes through are on page 2

www.irf.com

3/31/04

12 3 4 5 6 7 8

中文翻译

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与IRF6608相关器件

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IRF6609	INFINEON	获取价格	Power MOSFET
IRF6609PBF	INFINEON	获取价格	Power Field-Effect Transistor, 31A I(D), 20V, 0.002ohm, 1-Element, N-Channel, Silicon, Met
IRF6609TR1	INFINEON	获取价格	Power Field-Effect Transistor, 31A I(D), 20V, 0.002ohm, 1-Element, N-Channel, Silicon, Met
IRF6609TR1PBF	INFINEON	获取价格	Power Field-Effect Transistor, 31A I(D), 20V, 0.002ohm, 1-Element, N-Channel, Silicon, Met
IRF6609TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 31A I(D), 20V, 0.002ohm, 1-Element, N-Channel, Silicon, Met
IRF6610	INFINEON	获取价格	HEXFET Power MOSFET Silicon Technology with the advanced DirectFETTM
IRF6610TR1PBF	INFINEON	获取价格	Power Field-Effect Transistor, 15A I(D), 20V, 0.0068ohm, 1-Element, N-Channel, Silicon, Me
IRF6610TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 15A I(D), 20V, 0.0068ohm, 1-Element, N-Channel, Silicon, Me
IRF6611	INFINEON	获取价格	DirectFET Power MOSFET
IRF6611PBF	INFINEON	获取价格	DirectFET Power MOSFET

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