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IRF6609PBF

更新时间： 2024-11-27 20:42:19
品牌 Logo 应用领域
英飞凌 - INFINEON 瞄准线开关脉冲晶体管
页数 文件大小 规格书
11页 264K
描述
Power Field-Effect Transistor, 31A I(D), 20V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

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IRF6609PBF 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, ISOMETRIC-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.21
其他特性：LOW CONDUCTION LOSS雪崩能效等级（Eas）：240 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：20 V最大漏极电流 (ID)：31 A
最大漏源导通电阻：0.002 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3JESD-609代码：e1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：250 A认证状态：Not Qualified
表面贴装：YES端子面层：Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRF6609PBF 数据手册

 浏览型号IRF6609PBF的Datasheet PDF文件第2页浏览型号IRF6609PBF的Datasheet PDF文件第3页浏览型号IRF6609PBF的Datasheet PDF文件第4页浏览型号IRF6609PBF的Datasheet PDF文件第5页浏览型号IRF6609PBF的Datasheet PDF文件第6页浏览型号IRF6609PBF的Datasheet PDF文件第7页 
PD - 97091A  
IRF6609PbF  
IRF6609TRPbF  
DirectFET™ Power MOSFET ‚  
l RoHS Compliant   
l Lead-Free (Qualified up to 260°C Reflow)  
l Application Specific MOSFETs  
VDSS  
20V  
RDS(on) max  
2.0mΩ@VGS = 10V  
2.6mΩ@VGS = 4.5V  
Qg  
46nC  
l Ideal for CPU Core DC-DC Converters  
l Low Conduction Losses and Switching Losses  
l High Cdv/dt Immunity  
l Low Profile (<0.7mm)  
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
MT  
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)  
SQ SX ST MQ MX MT  
Description  
The IRF6609PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compat-  
ible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET  
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6609PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and  
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation  
of processors operating at higher frequencies. The IRF6609PbF has been optimized for parameters that are critical in synchronous buck  
operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6609PbF offers  
particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
20  
Units  
V
VDS  
V
I
Gate-to-Source Voltage  
±20  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
@ TC = 25°C  
150  
31  
D
I
I
I
@ TA = 25°C  
@ TA = 70°C  
A
D
D
25  
250  
89  
DM  
P
P
P
@TC = 25°C  
@TA = 25°C  
@TA = 70°C  
Power Dissipation  
D
D
D
Power Dissipation  
1.8  
2.8  
W
Power Dissipation  
Linear Derating Factor  
Operating Junction and  
0.022  
-40 to + 150  
W/°C  
°C  
T
T
J
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Ambient  
Typ.  
–––  
12.5  
20  
Max.  
45  
Units  
Rθ  
JA  
RθJA  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Case  
–––  
–––  
1.4  
RθJA  
°C/W  
RθJC  
–––  
1.0  
RθJ-PCB  
Junction-to-PCB Mounted  
–––  
Notes  through Šare on page 10  
www.irf.com  
1
7/3/06  
1234567...11

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IRF6609PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6609TRPBF INFINEON

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