Datasheet > IRF6603PBF

IRF6603PBF

更新时间： 2024-11-27 19:54:43

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
12页	258K
描述
Power Field-Effect Transistor, 27A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS AND REACH COMPLIANT, MT, ISOMETRIC-3

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IRF6603PBF 数据手册

PD - 94364F

IRF6603

HEXFET^®Power MOSFET

V_DSS

30V

R_DS(on)max

3.4mΩ@V_GS= 10V

5.5mΩ@V_GS= 4.5V

Qg(typ.)

l Application Specific MOSFETs

l Ideal for CPU Core DC-DC Converters

l Low Conduction Losses

48nC

l High Cdv/dt Immunity

l Low Profile (<0.7 mm)

l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount

Techniques

DirectFETISOMETRIC

Applicable DirectFET Outline and Substrate Outline (see p.9,10 for details)

SQ SX ST MQ MX MT

Description

The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TMpackaging to achieve the

lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques, when application note AN-1035 is followed regarding the manufacturing methods and process. The DirectFET package

allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6603 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and

switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation

of processors operating at higher frequencies. The IRF6603 has been optimized for parameters that are critical in synchronous buck

converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6603 offers particularly low Rds(on) and high Cdv/

dt immunity for synchronous FET applications.

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

Units

V_DS

Gate-to-Source Voltage

+20/-12

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

@ T_C= 25°C

200

3.6

Power Dissipation

@T_A= 25°C

@T_A= 70°C

@T_C= 25°C

Power Dissipation

2.3

Power Dissipation

Linear Derating Factor

Operating Junction and

0.029

-40 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Ambient

Typ.

–––

12.5

Max.

Units

R_θ

–––

3.0

Junction-to-Ambient

Junction-to-Case

R_θJA

°C/W

R_θJC

–––

1.0

R_θJ-PCB

Junction-to-PCB Mounted

–––

Notes through are on page 11

www.irf.com

12/22/05

12 3 4 5 6 7...12

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与IRF6603PBF相关器件

型号	品牌	获取价格	描述	数据表
IRF6603TR1	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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IRF6604PBF	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 30V, 0.0115ohm, 1-Element, N-Channel, Silicon, Me
IRF6604TR1	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRF6607	INFINEON	获取价格	Power MOSFET
IRF6607TR1	INFINEON	获取价格	Power MOSFET
IRF6608	INFINEON	获取价格	lHEXFET Power MOSFET
IRF6609	INFINEON	获取价格	Power MOSFET
IRF6609PBF	INFINEON	获取价格	Power Field-Effect Transistor, 31A I(D), 20V, 0.002ohm, 1-Element, N-Channel, Silicon, Met
IRF6609TR1	INFINEON	获取价格	Power Field-Effect Transistor, 31A I(D), 20V, 0.002ohm, 1-Element, N-Channel, Silicon, Met

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