IRF6604PBF

更新时间： 2024-11-27 13:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
11页	205K
描述
Power Field-Effect Transistor, 12A I(D), 30V, 0.0115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS AND REACH COMPLIANT, MQ, ISOMETRIC-3

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IRF6604PBF 数据手册

PD - 94365B

IRF6604

HEXFET^®Power MOSFET

l Application Specific MOSFETs

l Ideal for CPU Core DC-DC Converters

l Low Conduction Losses

V_DSS

30V

R_DS(on)max

11.5mΩ@V_GS= 7.0V

13mΩ@V_GS= 4.5V

17nC

l Low Switching Losses

l Low Profile (<0.7 mm)

l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount

Techniques

DirectFET ISOMETRIC

Description

The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TMpackaging

to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm

profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly

equipment and vapor phase, infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling

to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6604 balances both low resistance and low charge along with ultra low package inductance to reduce both conduc-

tion and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power

the latest generation of processors operating at higher frequencies. The IRF6604 has been optimized for parameters that

are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

±12

Continuous Drain Current, V_GS@ 7.0V

Pulsed Drain Current

@ T_C= 25°C

@ T_A= 25°C

@ T_A= 70°C

9.2

Power Dissipation

@T_A= 25°C

@T_A= 70°C

@T_C= 25°C

2.3

1.5

Power Dissipation

Linear Derating Factor

Operating Junction and

0.018

-40 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Ambient

Typ.

–––

12.5

Max.

Units

R_θJA

–––

3.0

Junction-to-Ambient

Junction-to-Case

R_θJA

°C/W

R_θJC

–––

1.0

R_θJ-PCB

Junction-to-PCB Mounted

–––

Notes through are on page 11

www.irf.com

6/11/03

12 3 4 5 6 7...11

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与IRF6604PBF相关器件

型号	品牌	获取价格	描述	数据表
IRF6604TR1	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRF6607	INFINEON	获取价格	Power MOSFET
IRF6607TR1	INFINEON	获取价格	Power MOSFET
IRF6608	INFINEON	获取价格	lHEXFET Power MOSFET
IRF6609	INFINEON	获取价格	Power MOSFET
IRF6609PBF	INFINEON	获取价格	Power Field-Effect Transistor, 31A I(D), 20V, 0.002ohm, 1-Element, N-Channel, Silicon, Met
IRF6609TR1	INFINEON	获取价格	Power Field-Effect Transistor, 31A I(D), 20V, 0.002ohm, 1-Element, N-Channel, Silicon, Met
IRF6609TR1PBF	INFINEON	获取价格	Power Field-Effect Transistor, 31A I(D), 20V, 0.002ohm, 1-Element, N-Channel, Silicon, Met
IRF6609TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 31A I(D), 20V, 0.002ohm, 1-Element, N-Channel, Silicon, Met
IRF6610	INFINEON	获取价格	HEXFET Power MOSFET Silicon Technology with the advanced DirectFETTM

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