Datasheet > IRF6601

IRF6601

更新时间： 2024-11-26 22:31:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	131K
描述
DirectFET⑩ Power MOSFET(Vdss=20V)

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中文翻译

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数据手册

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IRF6601 数据手册

PD - 94366C

IRF6601

DirectFET^TMPower MOSFET

l Application Specific MOSFETs

l Ideal for CPU Core DC-DC Converters

l Low Conduction Losses

l Low Switching Losses

l Low Profile (<0.7 mm)

V_DSS

20V

R_DS(on)max

3.8mΩ@V_GS= 10V

5.0mΩ@V_GS= 4.5V

I_D

26A

21A

l Dual Sided Cooling Compatible

l Compatible with exisiting Surface Mount

Techniques

DirectFET ISOMETRIC

Description

The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TMpackaging

toachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile. TheDirectFET

packageiscompatiblewithexistinglayoutgeometriesusedinpowerapplications,PCBassemblyequipmentandvaporphase,

infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling to maximize thermal transfer

in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6601 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction

and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the

latest generation of processors operating at higher frequencies. The IRF6601 has been optimized for parameters that are

critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6601

offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain- Source Voltage

I_D@ T_C= 25°C

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

200

P_D@T_A= 25°C

P_D@T_A= 70°C

P_D@T_C= 25°C

Power Dissipation

3.6

Power Dissipation

2.3

Power Dissipation

Linear Derating Factor

mW/°C

V_GS

Gate-to-Source Voltage

±20

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Symbol

R_θJA

Parameter

Junction-to-Ambient

Junction-to-Ambientꢀ

Junction-to-Case

Typ.

–––

Max.

Units

R_θJA

12.5

R_θJA

°C/W

R_θJC

3.0

R_θJ-PCB

Junction-to-PCB mounted

1.0

www.irf.com

3/25/02

12 3 4 5 6 7 8

中文翻译

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与IRF6601相关器件

型号	品牌	获取价格	描述	数据表
IRF6601TR1	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 20V, 0.0038ohm, 1-Element, N-Channel, Silicon, Me
IRF6601TR1PBF	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 20V, 0.0038ohm, 1-Element, N-Channel, Silicon, Me
IRF6602	INFINEON	获取价格	HEXFET Power MOSFET
IRF6602TR1	INFINEON	获取价格	HEXFET Power MOSFET
IRF6603	INFINEON	获取价格	HEXFETPower MOSFET
IRF6603PBF	INFINEON	获取价格	Power Field-Effect Transistor, 27A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Me
IRF6603TR1	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRF6604	INFINEON	获取价格	Power MOSFET
IRF6604PBF	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 30V, 0.0115ohm, 1-Element, N-Channel, Silicon, Me
IRF6604TR1	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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