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IRF654AJ69Z PDF预览

IRF654AJ69Z

更新时间: 2024-01-10 16:32:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关脉冲晶体管
页数 文件大小 规格书
7页 234K
描述
Power Field-Effect Transistor, 21A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

IRF654AJ69Z 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.7雪崩能效等级(Eas):551 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (ID):21 A最大漏源导通电阻:0.14 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):84 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF654AJ69Z 数据手册

 浏览型号IRF654AJ69Z的Datasheet PDF文件第2页浏览型号IRF654AJ69Z的Datasheet PDF文件第3页浏览型号IRF654AJ69Z的Datasheet PDF文件第4页浏览型号IRF654AJ69Z的Datasheet PDF文件第5页浏览型号IRF654AJ69Z的Datasheet PDF文件第6页浏览型号IRF654AJ69Z的Datasheet PDF文件第7页 
IRF654A  
Advanced Power MOSFET  
FEATURES  
BVDSS = 250 V  
RDS(on) = 0.14   
ID = 21 A  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
Improved Gate Charge  
Extended Safe Operating Area  
Lower Leakage Current : 10 µA (Max.) @ VDS = 250V  
Low RDS(ON) : 0.108 (Typ.)  
TO-220  
1
2
3
1.Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Drain-to-Source Voltage  
Value  
250  
21  
Units  
VDSS  
V
Continuous Drain Current (TC=25°C)  
Continuous Drain Current (TC=100°C)  
Drain Current-Pulsed  
ID  
A
13.3  
84  
(1)  
IDM  
VGS  
EAS  
IAR  
A
V
Gate-to-Source Voltage  
±30  
551  
21  
(2)  
(1)  
(1)  
(3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Total Power Dissipation (TC=25°C)  
Linear Derating Factor  
15.6  
4.8  
mJ  
V/ns  
W
156  
1.25  
PD  
TJ , TSTG  
TL  
W/°C  
Operating Junction and  
- 55 to +150  
300  
Storage Temperature Range  
Maximum Lead Temp. for Soldering  
°C  
Purposes, 1/8” from case for 5-seconds  
Thermal Resistance  
Symbol  
RθJC  
Characteristic  
Junction-to-Case  
Case-to-Sink  
Typ.  
Max.  
0.8  
Units  
--  
0.5  
--  
RθCS  
--  
°C/W  
RθJA  
Junction-to-Ambient  
62.5  
1

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