生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.7 | 雪崩能效等级(Eas): | 551 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (ID): | 21 A | 最大漏源导通电阻: | 0.14 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 84 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF654B | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET |
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IRF6601 | INFINEON |
获取价格 |
DirectFET⑩ Power MOSFET(Vdss=20V) |
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IRF6601TR1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 26A I(D), 20V, 0.0038ohm, 1-Element, N-Channel, Silicon, Me |
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IRF6601TR1PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 26A I(D), 20V, 0.0038ohm, 1-Element, N-Channel, Silicon, Me |
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IRF6602 | INFINEON |
获取价格 |
HEXFET Power MOSFET |
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IRF6602TR1 | INFINEON |
获取价格 |
HEXFET Power MOSFET |
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IRF6603 | INFINEON |
获取价格 |
HEXFETPower MOSFET |
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IRF6603PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 27A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Me |
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IRF6603TR1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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IRF6604 | INFINEON |
获取价格 |
Power MOSFET |
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