IRF650B

更新时间： 2024-11-26 22:51:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	899K
描述
200V N-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF650B 数据手册

IRF650B / IRFS650B

200V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters,

switch mode power supplies, DC-AC converters for

uninterrupted power supply and motor control.

•

28A, 200V, R

= 0.085Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 95 nC)

Low Crss ( typical 75 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

TO-220

IRF Series

TO-220F

IRFS Series

D S

G D

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

IRF650B

IRFS650B

Units

Drain-Source Voltage

200

DSS

- Continuous (T = 25°C)

Drain Current

28 *

17.7 *

112

- Continuous (T = 100°C)

17.7

112

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

600

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

15.6

5.5

V/ns

dv/dt

Power Dissipation (T = 25°C)

156

- Derate above 25°C

Operating and Storage Temperature Range

1.25

0.4

W/°C

°C

T , T

-55 to +150

300

STG

Maximum lead temperature for soldering purposes,

°C

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

IRF650B

IRFS650B

2.51

Units

°C/W

Thermal Resistance, Junction-to-Case Max.

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient Max

0.8

0.5

θJC

θCS

62.5

θJA

Rev. A1, December 2002

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRF650B相关器件

型号	品牌	获取价格	描述	数据表
IRF654	FAIRCHILD	获取价格	250V N-Channel MOSFET
IRF654A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRF654AJ69Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 21A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Met
IRF654B	FAIRCHILD	获取价格	250V N-Channel MOSFET
IRF6601	INFINEON	获取价格	DirectFET⑩ Power MOSFET(Vdss=20V)
IRF6601TR1	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 20V, 0.0038ohm, 1-Element, N-Channel, Silicon, Me
IRF6601TR1PBF	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 20V, 0.0038ohm, 1-Element, N-Channel, Silicon, Me
IRF6602	INFINEON	获取价格	HEXFET Power MOSFET
IRF6602TR1	INFINEON	获取价格	HEXFET Power MOSFET
IRF6603	INFINEON	获取价格	HEXFETPower MOSFET