IRF630NL

更新时间： 2024-11-21 04:23:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
11页	206K
描述
N-Channel Power MOSFETs 200V, 9.3A, 0.30з

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数据手册

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IRF630NL 数据手册

January 2002

IRF630N/IRF630NS/IRF630NL

N-Channel Power MOSFETs

200V, 9.3A, 0.30Ω

•

Peak Current vs Pulse Width Curve

UIS Rating Curve

Features

•

Ultra Low On-Resistance

= 0.200Ω (Typ), V = 10V

DS(ON)

Simulation Models

Temperature Compensated PSPICE® and SABER

Electrical Models

Spice and SABER Thermal Impedance Models

SOURCE

DRAIN

GATE

DRAIN

GATE

DRAIN

(FLANGE)

DRAIN

(FLANGE)

GATE

SOURCE

DRAIN

(FLANGE)

TO-263

TO-262

TO-220

MOSFET Maximum Ratings ^T= 25°C unless otherwise noted

Symbol

Parameter

Ratings

200

Units

Drain to Source Voltage

Gate to Source Voltage

DSS

±20

Drain Current

9.3

6.5

Continuous (T = 25 C, V = 10V)

Continuous (T = 100 C, V = 10V)

Pulsed

Figure 4

Single Pulse Avalanche Energy (Note 1)

Power dissipation

Derate above 25 C

0.55

W/ C

T , T

Operating and Storage Temperature

-55 to 175

STG

Thermal Characteristics

Thermal Resistance Junction to Case TO-220, TO-262, TO-263

1.83

C/W

θJC

θJA

Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263

C/W

Thermal Resistance Junction to Ambient TO-263, 1in copper pad area

C/W

Package Marking and Ordering Information

Device Marking

630N

Device

IRF630NS

IRF630NL

IRF630N

Package

TO-263AB

TO-262AA

TO-220AB

Reel Size

330mm

Tube

Tape Width

Quantity

800 units

24mm

N/A

630N

Tube

N/A

Rev. B

12 3 4 5 6 7...11

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