Datasheet > IRF630NSL99Z

IRF630NSL99Z

更新时间： 2024-09-29 09:35:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
11页	204K
描述
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF630NSL99Z 数据手册

January 2002

IRF630N/IRF630NS/IRF630NL

N-Channel Power MOSFETs

200V, 9.3A, 0.30Ω

•

Peak Current vs Pulse Width Curve

UIS Rating Curve

Features

•

Ultra Low On-Resistance

= 0.200Ω (Typ), V = 10V

DS(ON)

Simulation Models

Temperature Compensated PSPICE® and SABER

Electrical Models

Spice and SABER Thermal Impedance Models

SOURCE

DRAIN

GATE

DRAIN

GATE

DRAIN

(FLANGE)

DRAIN

(FLANGE)

GATE

SOURCE

DRAIN

(FLANGE)

TO-263

TO-262

TO-220

MOSFET Maximum Ratings ^T= 25°C unless otherwise noted

Symbol

Parameter

Ratings

200

Units

Drain to Source Voltage

Gate to Source Voltage

DSS

±20

Drain Current

9.3

6.5

Continuous (T = 25 C, V = 10V)

Continuous (T = 100 C, V = 10V)

Pulsed

Figure 4

Single Pulse Avalanche Energy (Note 1)

Power dissipation

Derate above 25 C

0.55

W/ C

T , T

Operating and Storage Temperature

-55 to 175

STG

Thermal Characteristics

Thermal Resistance Junction to Case TO-220, TO-262, TO-263

1.83

C/W

θJC

θJA

Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263

C/W

Thermal Resistance Junction to Ambient TO-263, 1in copper pad area

C/W

Package Marking and Ordering Information

Device Marking

630N

Device

IRF630NS

IRF630NL

IRF630N

Package

TO-263AB

TO-262AA

TO-220AB

Reel Size

330mm

Tube

Tape Width

Quantity

800 units

24mm

N/A

630N

Tube

N/A

Rev. B

12 3 4 5 6 7...11

中文翻译

下载PDF

与IRF630NSL99Z相关器件

型号	品牌	获取价格	描述	数据表
IRF630NSPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF630NSRPBF	INFINEON	获取价格	Advanced Process Technology
IRF630NSS62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Met
IRF630NSTRL	INFINEON	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 9.3A I(D) \| TO-263AB
IRF630NSTRLPBF	INFINEON	获取价格	暂无描述
IRF630NSTRR	INFINEON	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 9.3A I(D) \| TO-263AB
IRF630NSTRR	NJSEMI	获取价格	Trans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R
IRF630NSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Met
IRF630PBF	INFINEON	获取价格	HEXFET Power MOSFET ( VDSS = 200V , RDS(on) =
IRF630PBF	VISHAY	获取价格	Power MOSFET