Datasheet > IRF630S, SiHF630S

IRF630S, SiHF630S

更新时间： 2023-12-06 20:06:21

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	213K
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Power MOSFET

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IRF630S, SiHF630S

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Surface-mount

D²PAK (TO-263)

• Available in tape and reel

• Dynamic dv/dt rating

• Repetitive avalanche rated

• Fast switching

Available

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

N-Channel MOSFET

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details



PRODUCT SUMMARY

V_DS(V)

200

DESCRIPTION

R_DS(on)()

V_GS= 10 V

0.40

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

Q_gmax. (nC)

7.0

Q_gs(nC)

_gd(nC)

The D²PAK (TO-263) is a surface-mount power package

capable of accommodating die sizes up to HEX-4. It

provides the highest power capability and the lowest

possible on-resistance in any existing surface-mount

package. The D²PAK (TO-263) is suitable for high current

applications because of its low internal connection

resistance and can dissipate up to 2.0 W in a typical

surface-mount application.

Configuration

Single

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

Lead (Pb)-free

D²PAK (TO-263)

SiHF630S-GE3

IRF630SPbF

D²PAK (TO-263)

SiHF630STRL-GE3 a

IRF630STRLPbF ^a

D²PAK (TO-263)

SiHF630STRR-GE3 ^a

IRF630STRRPbF ^a

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

200

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

9.0

5.7

Continuous drain current

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

Linear derating factor

0.59

0.025

250

W/°C

Linear derating factor (PCB mount) ^e

Single pulse avalanche energy ^b

Repetitive avalanche current ^a

E_AS

I_AR

9.0

Repetitive avalanche energy ^a

E_AR

7.4

Maximum power dissipation

Maximum power dissipation (PCB mount) ^e

Peak diode recovery dv/dt ^c

T_C= 25 °C

T_A= 25 °C

3.0

5.0

P_D

V/ns

°C

dv/dt

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

T_J, T_stg

-55 to +150

300

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 50 V, starting T_J= 25 °C, L = 4.6 mH, R_g= 25 , I_AS= 9.0 A (see fig. 12)

c. I_SD 9.0 A, di/dt  120 A/μs, V_DD V_DS, T_J 150 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

S20-0683-Rev. D, 07-Sep-2020

Document Number: 91032

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与IRF630S, SiHF630S相关器件

型号	品牌	获取价格	描述	数据表
IRF630SPBF	INFINEON	获取价格	HEXFET POWER MOSFET ( VDSS = 200V , RDS(on) =
IRF630ST4	STMICROELECTRONICS	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 9A I(D) \| TO-263AB
IRF630STRLPBF	VISHAY	获取价格	Power MOSFET
IRF630STRR	VISHAY	获取价格	Power MOSFET
IRF630STRRPBF	VISHAY	获取价格	暂无描述
IRF630T	MOTOROLA	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
IRF630U	MOTOROLA	获取价格	9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF630U2	MOTOROLA	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
IRF630UA	MOTOROLA	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
IRF630WC	MOTOROLA	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal

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