Datasheet > IRF630ST4

IRF630ST4

更新时间： 2024-11-20 23:58:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
8页	87K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 9A I(D) \| TO-263AB

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数据手册

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IRF630ST4 数据手册

IRF630S

N - CHANNEL 200V - 0.35Ω - 9A - D PAK

MESH OVERLAY MOSFET

TYPE

IRF630S

V_DSS

R_DS(on)

I_D

200 V

< 0.40 Ω

9 A

■

TYPICAL R_DS(on)= 0.35 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

DESCRIPTION

D²PAK

TO-263

(suffix ”T4”)

This power MOSFET is designed using the

company’s consolidated strip layout-based MESH

OVERLAY process. This technology matches

and improves the performances compared with

standardparts from various sources.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT SWITCHING

UNINTERRUPTIBLE POWER SUPPLY (UPS)

DC/DC COVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT.

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

V_DGR

V_GS

I_D

Parameter

Value

200

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

200

± 20

Drain Current (continuous) at T_c= 25 C

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

I_D

5.7

I_DM( )

•

P_tot

Total Dissipation at T_c= 25 C

Derating Factor

0.56

W/^oC

V/ns

^oC

dv/dt(1) Peak Diode Recovery voltage slope

T_stg

T_j

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

( ) I_SD≤ 9A, di/dt ≤ 300 A/µs, V_DD≤ V_(BR)DSS, Tj ≤ T_JMAX

1/8

December 1998

12 3 4 5 6 7 8

中文翻译

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