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IRF632-001 PDF预览

IRF632-001

更新时间: 2024-11-22 07:11:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
1页 42K
描述
Power Field-Effect Transistor, 7.3A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

IRF632-001 数据手册

  

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7.3A, 200V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET
IRF632-002 INFINEON

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Power Field-Effect Transistor, 7.3A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Met
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Power Field-Effect Transistor, 7.3A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Met
IRF632-004 INFINEON

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Power Field-Effect Transistor, 7.3A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Met
IRF632-004PBF INFINEON

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Power Field-Effect Transistor, 7.3A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Met
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IRF632-006PBF INFINEON

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IRF632-009PBF INFINEON

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Power Field-Effect Transistor, 7.3A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Met
IRF632-010PBF INFINEON

获取价格

7.3A, 200V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET