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IRF632-011 PDF预览

IRF632-011

更新时间: 2023-01-02 16:51:28
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
1页 42K
描述
Power Field-Effect Transistor, 7.3A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRF632-011 数据手册

  

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