Datasheet > IRF634

IRF634

更新时间： 2024-10-04 05:39:27

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管场效应晶体管开关脉冲局域网
页数	文件大小	规格书
1页	115K
描述
N-channel mosfet transistor

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中文翻译

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数据手册

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IRF634 数据手册

MOSFET

INCHANGE

IRF634

N-channel mosfet transistor

Features

1 2 3

·With TO-220 package

·Simple drive requirements

·Fast switching

·V_DSS=250V; R_DS(ON)≤0.45Ω;I_D=8.1A

·1.gate 2.drain 3.source

Absolute Maximum Ratings Tc=25℃

SYMBOL

V_DSS

V_GS

I_D

PARAMETER

Drain-source voltage (V_GS=0)

Gate-source voltage

RATING

250

UNIT

±20

8.1

Drain Current-continuous@ T_C=25℃

Total Dissipation@T_C=25℃

Max. Operating Junction temperature

Storage temperature

P_tot

T_j

150

℃

T_stg

-65~150

TO-220

Electrical Characteristics Tc=25℃

SYMBOL

PARAMETER

CONDITIONS

MIN

250

MAX

UNIT

V_(BR)DSSDrain-source breakdown voltage

V_GS(TH)Gate threshold voltage

V_GS=0; I_D=0.25mA

V_DS= V_GS; I_D=0.25mA

R_DS(ON)Drain-source on-stage resistance V_GS=10V; I_D=5.1A

450

±100

mΩ

V_GS=±20V;V_DS=0

V_DS=250V; V_GS=0

I_F=8.1A; V_GS=0

I_GSS

I_DSS

V_SD

Gate source leakage current

Zero gate voltage drain current

Diode forward voltage

2.0

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与IRF634相关器件

型号	品牌	获取价格	描述	数据表
IRF634-001	INFINEON	获取价格	Power Field-Effect Transistor, 8.4A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Me
IRF634-001PBF	INFINEON	获取价格	Power Field-Effect Transistor, 8.4A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Me
IRF634-004	VISHAY	获取价格	Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Me
IRF634-004PBF	VISHAY	获取价格	Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Me
IRF634-024	VISHAY	获取价格	Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Me
IRF634A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRF634B	SUNTAC	获取价格	POWER MOSFET
IRF634B	KERSEMI	获取价格	250V N-Channel MOSFET
IRF634B	FAIRCHILD	获取价格	250V N-Channel MOSFET
IRF634B-FP001	ONSEMI	获取价格	分立式 MOSFET