IRF630STRRPBF

更新时间： 2024-02-11 19:07:33

品牌	Logo	应用领域
威世 - VISHAY		/
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8页	580K
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中文翻译

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数据手册

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IRF630STRRPBF 数据手册

IRF630, SiHF630

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

200

• Repetitive Avalanche Rated

• Fast Switching

Available

_DS(on)(Ω)

V_GS= 10 V

0.40

RoHS*

Q_g(Max.) (nC)

7.0

COMPLIANT

• Ease of Paralleling

_gs(nC)

_gd(nC)

• Simple Drive Requirements

• Lead (Pb)-free Available

Configuration

Single

DESCRIPTION

TO-220

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220

IRF630PbF

SiHF630-E3

IRF630

Lead (Pb)-free

SnPb

SiHF630

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

200

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C=100°C

9.0

Continuous Drain Current

_GSat 10 V

I_D

5.7

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.59

250

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

9.0

E_AR

7.4

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

5.0

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 4.6 mH, R_G= 25 Ω, I_AS= 9.0 A (see fig. 12).

c. I_SD≤ 9.0 A, dI/dt ≤ 120 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91031

S-81240-Rev. A, 16-Jun-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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与IRF630STRRPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF630T	MOTOROLA	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
IRF630U	MOTOROLA	获取价格	9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF630U2	MOTOROLA	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
IRF630UA	MOTOROLA	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
IRF630WC	MOTOROLA	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
IRF631	FAIRCHILD	获取价格	N-Channel Power MOSFETs, 12A, 150-200 V
IRF631	SAMSUNG	获取价格	Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
IRF631	NJSEMI	获取价格	Trans MOSFET N-CH 150V 9A
IRF631	RENESAS	获取价格	9A, 150V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF631-001	INFINEON	获取价格	Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal

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