生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.6 | 雪崩能效等级(Eas): | 94 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (ID): | 9.3 A |
最大漏源导通电阻: | 0.3 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF630NSTRL | INFINEON |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.3A I(D) | TO-263AB |
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IRF630NSTRLPBF | INFINEON |
获取价格 |
暂无描述 |
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IRF630NSTRR | INFINEON |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.3A I(D) | TO-263AB |
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IRF630NSTRR | NJSEMI |
获取价格 |
Trans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R |
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IRF630NSTRRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Met |
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IRF630PBF | INFINEON |
获取价格 |
HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = |
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IRF630PBF | VISHAY |
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Power MOSFET |
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IRF630R | RENESAS |
获取价格 |
9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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IRF630S | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal |
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IRF630S | STMICROELECTRONICS |
获取价格 |
N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET |
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