是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.03 |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 250 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (ID): | 9 A |
最大漏源导通电阻: | 0.4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 36 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | MATTE TIN OVER NICKEL | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRF630NSTRLPBF | INFINEON |
类似代替 |
暂无描述 | |
IRF630NSTRRPBF | INFINEON |
类似代替 |
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Met | |
IRF630NSPBF | INFINEON |
类似代替 |
HEXFET Power MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF630NSTRRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Met | |
IRF630PBF | INFINEON |
获取价格 |
HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = | |
IRF630PBF | VISHAY |
获取价格 |
Power MOSFET | |
IRF630R | RENESAS |
获取价格 |
9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
IRF630S | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal | |
IRF630S | STMICROELECTRONICS |
获取价格 |
N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET | |
IRF630S | NXP |
获取价格 |
N-channel TrenchMOS transistor | |
IRF630S | TRSYS |
获取价格 |
Power MOSFET | |
IRF630S | VISHAY |
获取价格 |
Power MOSFET | |
IRF630S | NJSEMI |
获取价格 |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK |