是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.03 |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 250 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (ID): | 9 A |
最大漏源导通电阻: | 0.4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 36 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | MATTE TIN OVER NICKEL | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRFB4620PBF | INFINEON |
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IRFB4020PBF | INFINEON |
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IRF630 | STMICROELECTRONICS |
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N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF630R | RENESAS |
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9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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IRF630S | MOTOROLA |
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IRF630S | STMICROELECTRONICS |
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N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET |
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IRF630S | NXP |
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IRF630S | TRSYS |
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IRF630S | VISHAY |
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Power MOSFET |
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IRF630S | NJSEMI |
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IRF630S (KRF630S) | KEXIN |
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IRF630S, SiHF630S | VISHAY |
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IRF630SPBF | INFINEON |
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HEXFET POWER MOSFET ( VDSS = 200V , RDS(on) = |
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