Datasheet > IRF630NSRPBF

IRF630NSRPBF

更新时间： 2024-11-19 01:23:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	340K
描述
Advanced Process Technology

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中文翻译

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数据手册

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IRF630NSRPBF 数据手册

PD - 95047A

IRF630NPbF

IRF630NSPbF

IRF630NLPbF

HEXFET^®Power MOSFET

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

V_DSS= 200V

l Fully Avalanche Rated

l Ease of Paralleling

l Simple Drive Requirements

l Lead-Free

R_DS(on)= 0.30Ω

Description

I_D= 9.3A

Fifth Generation HEXFET^®Power MOSFETs from

InternationalRectifierutilizeadvancedprocessingtechniques

to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs

are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

The TO-220 package is universally preferred for all

commercial-industrialapplicationsatpowerdissipationlevels

to approximately 50 watts. The low thermal resistance and

low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of its

low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application.

D²Pak

IRF630NSPbF IRF630NLPbF

TO-262

TO-220AB

IRF630NPbF

The through-hole version (IRF630NL) is available for low-

profile application.

Absolute Maximum Ratings

Parameter

Max.

9.3

6.5

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.5

V_GS

E_AS

I_AR

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy

Avalanche Current

9.3

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

8.2

V/ns

8.1

-55 to +175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

www.irf.com

07/23/10

12 3 4 5 6 7...11

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与IRF630NSRPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF630NSS62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Met
IRF630NSTRL	INFINEON	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 9.3A I(D) \| TO-263AB
IRF630NSTRLPBF	INFINEON	获取价格	暂无描述
IRF630NSTRR	INFINEON	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 9.3A I(D) \| TO-263AB
IRF630NSTRR	NJSEMI	获取价格	Trans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R
IRF630NSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Met
IRF630PBF	INFINEON	获取价格	HEXFET Power MOSFET ( VDSS = 200V , RDS(on) =
IRF630PBF	VISHAY	获取价格	Power MOSFET
IRF630R	RENESAS	获取价格	9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF630S	MOTOROLA	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal

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