IRF630NS

更新时间： 2024-11-18 04:23:15

品牌	Logo	应用领域
TRSYS		晶体晶体管开关
页数	文件大小	规格书
2页	174K
描述
Power MOSFET

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中文翻译

获取价格

数据手册

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IRF630NS 数据手册

IRF630N/NS/NL

Power MOSFET

V_{DSS =}200V, R_DS(on)= 0.30 ohm, I_D= 9.3 A

IRF620N

IRF630NS

IRF630NL

Symbol

ELECTRICAL CHARACTERISICS at

C Maximum. Unless stated Otherwise

Test Conditions

Tj = 25

Value

Typ

Parameter

Unit

Symbol

V_(BR)DSS

Max

Min

200

Volt

V_GS= 0 V_DC,I_D= 250µA

V_DS= 200V_DC, V_GS= 0V_DC

Drain to Source Breakdown Voltage

Drain to Source Leakage Current

I_DSS

250

µA

V_DS= 160V_DC, V_GS= 0V_DC

Tj=150

V_GS= +20V_DC

V_GS= -20V_DC

100

-100

I_GSS

V_GS(th)

Gate to Source Leakage Current

Gate Threshold Voltage

I_D= 250µA

_DS= V_GS

2.0

4.0

Volt

R_DS(on)V_GS= 10V_DC, I_D= 5.4A

0.30

Static Drain to Source On - Resistance

Q_G

Gate Charge

6.5

I_D= 5.4A

Gate to Source Charge

Gate to Drain Charge

Q_GS

Q_GD

C_ISS

C_OSS

C_RSS

_DS= 160V_DC,

V_GS= 10V_DC

575

Input Capacitance

Output Capacitance

Transfer Capacitance

V_DS= 25V_DC, V_GS= 0V_DC, f = 1.0MHZ

(on)

Turn On Delay Time

Turn Off Delay Time

Rise Time

7.9

(off) V_DD= 100V_DC, I_D= 4.8A, R_G=18

R_D= 20

Fall Time

Continuous Source Current

Pulsed Source Current

Forward Voltage (Diode)

I_S

9.3

1.3

I_SM

V_SD

V_GS= 0V_DC, I_S=5.4A, Tp = 300µS

(Tj = 25 C unless stated otherwise)

MAXIMUM RATINGS

Parameter

Condition

Symbol

V_GS

Value

+/- 20V

200

Unit

Volt

Amp

Gate to Source Voltage

Drain to Source

Voltage

Continuous Drain Current

V_DSS

I_D

9.3

I_DM

P_D

Amp

Pulsed Drain Current

Total Power Dissapation

(T_A= 25 C)

Thermal Resistance

(Junction to Ambient)

R_TH

C/W

(J-A)

Maximum Operating Temperature Range (Tj) -55 to +175

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