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IRF1404ZSTRLPBF PDF预览

IRF1404ZSTRLPBF

更新时间: 2024-09-13 13:08:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 107K
描述
Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

IRF1404ZSTRLPBF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:LEAD FREE, PLASTIC, D2PAK-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.82Is Samacsys:N
其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE雪崩能效等级(Eas):330 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):75 A
最大漏极电流 (ID):75 A最大漏源导通电阻:0.0037 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):200 W
最大脉冲漏极电流 (IDM):710 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF1404ZSTRLPBF 数据手册

 浏览型号IRF1404ZSTRLPBF的Datasheet PDF文件第2页浏览型号IRF1404ZSTRLPBF的Datasheet PDF文件第3页浏览型号IRF1404ZSTRLPBF的Datasheet PDF文件第4页浏览型号IRF1404ZSTRLPBF的Datasheet PDF文件第5页浏览型号IRF1404ZSTRLPBF的Datasheet PDF文件第6页浏览型号IRF1404ZSTRLPBF的Datasheet PDF文件第7页 
PD -91896E  
IRF1404  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
D
VDSS = 40V  
l 175°C Operating Temperature  
l Fast Switching  
RDS(on) = 0.004Ω  
G
l Fully Avalanche Rated  
ID = 162A†  
S
Description  
Seventh Generation HEXFET® Power MOSFETs from  
International Rectifier utilize advanced processing  
techniques to achieve extremely low on-resistance per  
silicon area. This benefit, combined with the fast  
switching speed and ruggedized device design that  
HEXFET power MOSFETs are well known for, provides  
the designer with an extremely efficient and reliable  
device for use in a wide variety of applications.  
The TO-220 package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 50 watts. The low thermal  
resistance and low package cost of the TO-220  
contributetoitswideacceptancethroughouttheindustry.  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
162†  
115†  
650  
200  
1.3  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
A
PD @TC = 25°C  
Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
± 20  
519  
95  
Single Pulse Avalanche Energy‚  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
20  
mJ  
V/ns  
5.0  
-55 to + 175  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
0.75  
–––  
62  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
°C/W  
www.irf.com  
1
10/20/00  

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