Datasheet > IRF1405STRR

IRF1405STRR

更新时间： 2024-11-26 23:58:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
11页	149K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 55V V(BR)DSS \| 131A I(D) \| TO-263AB

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中文翻译

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数据手册

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IRF1405STRR 数据手册

PD -93992

IRF1405S

IRF1405L

AUTOMOTIVE MOSFET

Typical Applications

HEXFET^®Power MOSFET

●

Electric Power Steering (EPS)

Anti-lock Braking System (ABS)

Wiper Control

Climate Control

Power Door

V_DSS= 55V

R_DS(on)= 5.3mΩ

Benefits

●

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

I_D= 131A

Description

Stripe Planar design of HEXFET^®Power MOSFETs

utilizes the lastest processing techniques to achieve

extremelylow on-resistancepersiliconarea. Additional

features of this HEXFET power MOSFET are a 175°C

junction operating temperature, fast switching speed

and improved repetitive avalanche rating. These

benefits combine to make this design an extremely

efficient and reliable device for use in Automotive

applications and a wide variety of other applications.

Absolute Maximum Ratings

D²Pak

IRF1405S

TO-262

IRF1405L

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

131

680

P_D@T_C= 25°C

Power Dissipation

200

W/°C

Linear Derating Factor

1.3

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

590

Single Pulse Avalanche Energy

Avalanche Current

See Fig.12a, 12b, 15, 16

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.75

Units

°C/W

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)

–––

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