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IRF1407STRLPBF PDF预览

IRF1407STRLPBF

更新时间: 2024-09-13 13:01:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
9页 129K
描述
Power Field-Effect Transistor, 75A I(D), 75V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

IRF1407STRLPBF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:LEAD FREE, PLASTIC, D2PAK-3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.7Is Samacsys:N
其他特性:HIGH RELIABILITY, ULTRA LOW RESISTANCE雪崩能效等级(Eas):390 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:75 V最大漏极电流 (Abs) (ID):100 A
最大漏极电流 (ID):75 A最大漏源导通电阻:0.0078 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):3.8 W
最大脉冲漏极电流 (IDM):520 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF1407STRLPBF 数据手册

 浏览型号IRF1407STRLPBF的Datasheet PDF文件第2页浏览型号IRF1407STRLPBF的Datasheet PDF文件第3页浏览型号IRF1407STRLPBF的Datasheet PDF文件第4页浏览型号IRF1407STRLPBF的Datasheet PDF文件第5页浏览型号IRF1407STRLPBF的Datasheet PDF文件第6页浏览型号IRF1407STRLPBF的Datasheet PDF文件第7页 
PD - 93907  
AUTOMOTIVE MOSFET  
IRF1407  
HEXFET® Power MOSFET  
Typical Applications  
Integrated Starter Alternator  
D
42 Volts Automotive Electrical Systems  
VDSS = 75V  
Benefits  
Advanced Process Technology  
R
DS(on) = 0.0078Ω  
Ultra Low On-Resistance  
Dynamic dv/dt Rating  
175°C Operating Temperature  
Fast Switching  
G
ID = 130A†  
S
Repetitive Avalanche Allowed up to Tjmax  
Description  
Specifically designed for Automotive applications, this Stripe Planar  
design of HEXFET® Power MOSFETs utilizes the lastest processing  
techniques to achieve extremely low on-resistance per silicon area.  
Additional features of this HEXFET power MOSFET are a 175°C junction  
operating temperature, fast switching speed and improved repetitive  
avalancherating.Thesebenefitscombinetomakethisdesignanextremely  
efficient and reliable device for use in Automotive applications and a wide  
variety of other applications.  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
130†  
92†  
520  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
A
PD @TC = 25°C  
Power Dissipation  
330  
W
W/°C  
V
Linear Derating Factor  
2.2  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
± 20  
390  
Single Pulse Avalanche Energy‚  
Avalanche Current  
mJ  
See Fig.12a, 12b, 15, 16  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy‡  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
mJ  
4.6  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
0.45  
–––  
62  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
°C/W  
www.irf.com  
1
10/11/01  

IRF1407STRLPBF 替代型号

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IRF1407STRRPBF INFINEON

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IRF1407S INFINEON

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