Datasheet > IRF1405ZSTRL-7P

IRF1405ZSTRL-7P

更新时间： 2024-11-27 14:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
12页	688K
描述
Power Field-Effect Transistor, 120A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-7

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IRF1405ZSTRL-7P 数据手册

PD - 96905B

AUTOMOTIVE MOSFET

IRF1405ZS-7P

IRF1405ZL-7P

HEXFET^®Power MOSFET

Features

Advanced Process Technology

V_DSS= 55V

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

R_DS(on)= 4.9mΩ

Repetitive Avalanche Allowed up to Tjmax

I_D= 120A

S (Pin 2, 3, 5, 6, 7)

G (Pin 1)

Description

SpecificallydesignedforAutomotiveapplications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistancepersiliconarea. Additionalfeatures

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitiveavalancherating. Thesefeaturescom-

bine to make this design an extremely efficient

andreliabledeviceforuseinAutomotiveapplica-

tions and a wide variety of other applications.

D²Pak7Pin

TO-263CA 7 Pin

Absolute Maximum Ratings

Parameter

Max.

150

100

120

590

230

Units

@ T_C= 25°C

@ T_C= 100°C

@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (See Fig. 9)

(Package Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

1.5

± 20

W/°C

Gate-to-Source Voltage

E_AS

250

810

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(tested)

I_AR

See Fig.12a,12b,15,16

E_AR

°C

Repetitive Avalanche Energy

-55 to + 175

Operating Junction and

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Typ.

–––

Max.

0.65

–––

Units

°C/W

R_θJC

Junction-to-Case

R_θCS

R_θJA

0.50

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

–––

Junction-to-Ambient (PCB Mount, steady state)

HEXFET^®is a registered trademark of International Rectifier.

www.irf.com

12/6/06

12 3 4 5 6 7...12

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与IRF1405ZSTRL-7P相关器件

型号	品牌	获取价格	描述	数据表
IRF1405ZSTRL7PP	INFINEON	获取价格	Power Field-Effect Transistor,
IRF1405ZSTRL-7PPBF	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, M
IRF1405ZSTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Me
IRF1405ZSTRR	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Me
IRF1405ZSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Me
IRF1407	INFINEON	获取价格	Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=
IRF1407L	INFINEON	获取价格	Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, I
IRF1407LPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET ( VDSS = 75V , RDS(on) =
IRF1407PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRF1407S	INFINEON	获取价格	Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, I

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