IRF1407STRR

更新时间： 2024-09-12 23:58:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
11页	161K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 75V V(BR)DSS \| 100A I(D) \| TO-263AB

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IRF1407STRR 数据手册

PD -94335

IRF1407S

IRF1407L

HEXFET^®Power MOSFET

Benefits

●

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

V_DSS= 75V

Repetitive Avalanche Allowed up to Tjmax

_DS(on)= 0.0078Ω

Description

AdvancedHEXFET^®PowerMOSFETsfromInternational

Rectifierutilizeadvancedprocessingtechniquestoachieve

extremelylowon-resistancepersiliconarea. Thisbenefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

knownfor,providesthedesignerwithanextremelyefficient

andreliabledeviceforuseinawidevarietyofapplications.

The D²Pak is a surface mount power package capable of

accommodatingdiesizesuptoHEX-4. Itprovidesthehighest

powercapabilityandthelowestpossibleon-resistanceinany

existing surface mount package. The D²Pak is suitable for

highcurrentapplicationsbecauseofitslowinternalconnection

resistance and can dissipate up to 2.0W in a typical surface

mount application.

I_D= 100A

D²Pak

TO-262

IRF1407S

IRF1407L

The through-hole version (IRF1407L) is available for low-

profile applications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

100

520

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.8

Power Dissipation

200

Linear Derating Factor

1.3

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

390

Single Pulse Avalanche Energy

Avalanche Current

See Fig.12a, 12b, 15, 16

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

4.6

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

0.75

Units

°C/W

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient(PCB Mounted,steady-state)**

–––

**When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer

to application note #AN-994.

www.irf.com

10/05/01

12 3 4 5 6 7...11

中文翻译

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IRF1407STRR 替代型号

型号	品牌	替代类型	描述	数据表
IRF1407STRRPBF	INFINEON	类似代替	暂无描述

与IRF1407STRR相关器件

型号	品牌	获取价格	描述	数据表
IRF1407STRRPBF	INFINEON	获取价格	暂无描述
IRF140EA	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Me
IRF140EBPBF	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Me
IRF140EC	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Me
IRF140EPBF	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Me
IRF140ES	NJSEMI	获取价格	Trans MOSFET N-CH 55V 150A 3-Pin(3+Tab) TO-220AB T/R
IRF140R	NJSEMI	获取价格	Trans MOSFET N-CH 55V 150A 3-Pin(3+Tab) TO-220AB T/R
IRF140SMD	SEME-LAB	获取价格	N-CHANNEL POWER MOSFET
IRF141	SAMSUNG	获取价格	N-CHANNEL POWER MOSFETS
IRF141	ROCHESTER	获取价格	28A, 80V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240AE, TO-204AE, 2 PIN

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