IRF1407

更新时间： 2024-09-12 22:48:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
9页	129K
描述
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF1407 数据手册

PD - 93907

AUTOMOTIVE MOSFET

IRF1407

HEXFET^®Power MOSFET

Typical Applications

●

Integrated Starter Alternator

●

42 Volts Automotive Electrical Systems

V_DSS= 75V

Benefits

●

Advanced Process Technology

_DS(on)= 0.0078Ω

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

I_D= 130A

Repetitive Avalanche Allowed up to Tjmax

Description

Specifically designed for Automotive applications, this Stripe Planar

design of HEXFET^®Power MOSFETs utilizes the lastest processing

techniques to achieve extremely low on-resistance per silicon area.

Additional features of this HEXFET power MOSFET are a 175°C junction

operating temperature, fast switching speed and improved repetitive

avalancherating.Thesebenefitscombinetomakethisdesignanextremely

efficient and reliable device for use in Automotive applications and a wide

variety of other applications.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

130

520

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

330

W/°C

Linear Derating Factor

2.2

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

390

Single Pulse Avalanche Energy

Avalanche Current

See Fig.12a, 12b, 15, 16

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

4.6

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.45

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

www.irf.com

10/11/01

12 3 4 5 6 7...9

中文翻译

下载PDF

与IRF1407相关器件

型号	品牌	获取价格	描述	数据表
IRF1407L	INFINEON	获取价格	Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, I
IRF1407LPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET ( VDSS = 75V , RDS(on) =
IRF1407PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRF1407S	INFINEON	获取价格	Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, I
IRF1407SPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET ( VDSS = 75V , RDS(on) =
IRF1407STRL	INFINEON	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 75V V(BR)DSS \| 100A I(D) \| TO-263AB
IRF1407STRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 75V, 0.0078ohm, 1-Element, N-Channel, Silicon, Me
IRF1407STRR	INFINEON	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 75V V(BR)DSS \| 100A I(D) \| TO-263AB
IRF1407STRRPBF	INFINEON	获取价格	暂无描述
IRF140EA	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Me