IRF1405ZS

更新时间： 2024-01-31 03:38:29

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
12页	291K
描述
AUTOMOTIVE MOSFET

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中文翻译

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数据手册
替代型号

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IRF1405ZS 数据手册

PD - 94645A

IRF1405Z

IRF1405ZS

AUTOMOTIVE MOSFET

IRF1405ZL

HEXFET^®Power MOSFET

Features

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

V_DSS= 55V

_DS(on)= 4.9mΩ

Repetitive Avalanche Allowed up to Tjmax

I_D= 75A

Description

SpecificallydesignedforAutomotiveapplications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistancepersiliconarea. Additionalfeatures

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating . These features com-

binetomakethisdesignanextremelyefficientand

reliable device for use in Automotive applications

and a wide variety of other applications.

D²Pak

IRF1405ZS

TO-262

IRF1405ZL

TO-220AB

IRF1405Z

Absolute Maximum Ratings

Parameter

Max.

150

110

Units

@ T = 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

@ T = 100°C

Continuous Drain Current, V_GS@ 10V

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

@ T = 25°C

600

230

@T = 25°C

Power Dissipation

Linear Derating Factor

1.5

± 20

W/°C

Gate-to-Source Voltage

E_{AS (Thermally limited)}

270

420

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(Tested )

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

Operating Junction and

-55 to + 175

°C

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

STG

300 (1.6mm from case )

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

0.65

–––

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

–––

Junction-to-Ambient (PCB Mount, steady state)

HEXFET^®is a registered trademark of International Rectifier.

www.irf.com

08/29/03

12 3 4 5 6 7...12

中文翻译

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IRF1405ZS 替代型号

型号	品牌	替代类型	描述	数据表
IRF1405ZSTRLPBF	INFINEON	类似代替	Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Me
AUIRF1405ZS	INFINEON	类似代替	HEXFET® Power MOSFET
IRF1405ZSPBF	INFINEON	类似代替	AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.

与IRF1405ZS相关器件

型号	品牌	获取价格	描述	数据表
IRF1405ZS-7P	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRF1405ZS-7PPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) =
IRF1405ZSPBF	INFINEON	获取价格	AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.
IRF1405ZSTRL-7P	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, M
IRF1405ZSTRL7PP	INFINEON	获取价格	Power Field-Effect Transistor,
IRF1405ZSTRL-7PPBF	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, M
IRF1405ZSTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Me
IRF1405ZSTRR	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Me
IRF1405ZSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Me
IRF1407	INFINEON	获取价格	Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=

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