Datasheet > IRF1405

IRF1405

更新时间： 2024-09-13 12:33:43

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
9页	3362K
描述
Electric Power Steering (EPS)

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中文翻译

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数据手册

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IRF1405 数据手册

AUTOMOTIVE MOSFET

www.kersemi.com

IRF1405

HEXFET^®Power MOSFET

Typical Applications

●

Electric Power Steering (EPS)

Anti-lock Braking System (ABS)

Wiper Control

V_DSS= 55V

Climate Control

Power Door

Benefits

R_DS(on)= 5.3mΩ

●

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

I_D= 169A

Repetitive Avalanche Allowed up to Tjmax

Description

Specifically designed for Automotive applications, this

Stripe Planar design of HEXFET^®Power MOSFETs

utilizes the lastest processing techniques to achieve

extremelylow on-resistancepersiliconarea. Additional

features of this HEXFET power MOSFET are a 175°C

junction operating temperature, fast switching speed

andimprovedrepetitiveavalancherating.Thesebenefits

combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a

wide variety of other applications.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

169

118

680

P_D@T_C= 25°C

Power Dissipation

330

W/°C

Linear Derating Factor

2.2

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

560

Single Pulse Avalanche Energy

Avalanche Current

See Fig.12a, 12b, 15, 16

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

°C/W

R_θJC

R_θCS

R_θJA

0.45

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

12 3 4 5 6 7...9

中文翻译

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