IRF1405LPBF

更新时间： 2024-09-13 03:58:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲 PC 局域网
页数	文件大小	规格书
12页	236K
描述
AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3mヘ , ID = 131A )

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IRF1405LPBF 数据手册

PD-95331

IRF1405SPbF

IRF1405LPbF

AUTOMOTIVE MOSFET

Typical Applications

Electric Power Steering (EPS)

Anti-lock Braking System (ABS)

Wiper Control

Climate Control

Power Door

Lead-Free

HEXFET^®Power MOSFET

V_DSS= 55V

R_DS(on)= 5.3mΩ

Benefits

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

I_D= 131A

Description

Stripe Planar design of HEXFET^®Power MOSFETs

utilizes the lastest processing techniques to achieve

extremelylow on-resistancepersiliconarea. Additional

features of this HEXFET power MOSFET are a 175°C

junction operating temperature, fast switching speed

and improved repetitive avalanche rating. These

benefits combine to make this design an extremely

efficient and reliable device for use in Automotive

applications and a wide variety of other applications.

Absolute Maximum Ratings

D²Pak

IRF1405S

TO-262

IRF1405L

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

131

680

P_D@T_C= 25°C

Power Dissipation

200

W/°C

Linear Derating Factor

1.3

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

590

Single Pulse Avalanche Energy

Avalanche Current

See Fig.12a, 12b, 15, 16

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.75

Units

°C/W

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)

–––

www.irf.com

05/27/04

12 3 4 5 6 7...12

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