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IRF1010NL PDF预览

IRF1010NL

更新时间: 2024-11-17 22:33:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 147K
描述
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)

IRF1010NL 数据手册

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PD - 94171  
IRF1010NS  
IRF1010NL  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
l 175°C Operating Temperature  
l Fast Switching  
HEXFET® Power MOSFET  
D
VDSS = 55V  
R
DS(on) = 11mΩ  
l Fully Avalanche Rated  
Description  
G
Advanced HEXFET® Power MOSFETs from  
International Rectifier utilize advanced processing  
techniques to achieve extremely low on-resistance per  
siliconarea. Thisbenefit,combinedwiththefastswitching  
speed and ruggedized device design that HEXFET  
power MOSFETs are well known for, provides the  
designer with an extremely efficient and reliable device  
for use in a wide variety of applications.  
ID = 85A‡  
S
The D2Pak is a surface mount power package capable of  
accommodating die sizes up to HEX-4. It provides the  
highest power capability and the lowest possible on-  
resistance in any existing surface mount package. The  
D2Pakissuitableforhighcurrentapplicationsbecauseofits  
low internal connection resistance and can dissipate up to  
2.0W in a typical surface mount application.  
2
T O -262  
IRF1010NL  
D
Pak  
IRF1010NS  
The through-hole version (IRF1010NL) is available for low-  
profile applications.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V ˆ  
Continuous Drain Current, VGS @ 10V ˆ  
Pulsed Drain Current ˆ  
85‡  
60  
A
290  
180  
1.2  
± 20  
43  
PD @TC = 25°C  
Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
VGS  
IAR  
Gate-to-Source Voltage  
Avalanche Current  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒˆ  
Operating Junction and  
18  
mJ  
V/ns  
3.6  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbfin (1.1Nm)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Junction-to-Ambient ( PCB Mounted,steady-state)**  
Typ.  
–––  
Max.  
0.85  
40  
Units  
RθJC  
RθJA  
–––  
°C/W  
www.irf.com  
1
02/14/02  

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