型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF1010NLPBF | INFINEON |
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HEXFET㈢ Power MOSFET | |
IRF1010NPBF | INFINEON |
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HEXFET Power MOSFET | |
IRF1010NPBF | KERSEMI |
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Advanced Process Technology Ultra Low On-Resistance | |
IRF1010NS | INFINEON |
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Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id= | |
IRF1010NSPBF | INFINEON |
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HEXFET㈢ Power MOSFET | |
IRF1010NSTRL | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 84A I(D) | TO-263AB | |
IRF1010NSTRLPBF | INFINEON |
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Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met | |
IRF1010NSTRR | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 84A I(D) | TO-263AB | |
IRF1010NSTRRPBF | INFINEON |
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暂无描述 | |
IRF1010S | INFINEON |
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Power Field-Effect Transistor, 75A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Met |