Datasheet > IRF1018ES

IRF1018ES

更新时间： 2024-11-19 11:15:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	438K
描述
60V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

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中文翻译

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数据手册

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IRF1018ES 数据手册

PD - 97125

IRF1018EPbF

IRF1018ESPbF

IRF1018ESLPbF

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in

SMPS

V_DSS

R_DS(on)typ.

max.

60V

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

7.1m

8.4m

I_D

79A

Benefits

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche SOA

l Enhanced body diode dV/dt and dI/dt

Capability

D²Pak

IRF1018ESPbF

TO-262

IRF1018ESLPbF

TO-220AB

IRF1018EPbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current c

Max.

Units

315

110

0.76

± 20

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

Peak Diode Recovery e

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lbxin (1.1Nxm)

Mounting torque, 6-32 or M3 screw k

Avalanche Characteristics

Single Pulse Avalanche Energy d

E_{AS (Thermally limited)}

Avalanche Current c

I_AR

Repetitive Avalanche Energy f

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case j

1.32

–––

Case-to-Sink, Flat Greased Surface , TO-220

Junction-to-Ambient, TO-220 j

Junction-to-Ambient (PCB Mount) , D²Pak ij

0.50

–––

°C/W

–––

www.irf.com

2/28/08

12 3 4 5 6 7...12

中文翻译

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