Datasheet > IRF1010NSTRL

IRF1010NSTRL

更新时间： 2024-11-17 23:58:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
10页	303K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 55V V(BR)DSS \| 84A I(D) \| TO-263AB

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IRF1010NSTRL 数据手册

PD - 91372B

IRF1010NS/L

HEXFET^®Power MOSFET

l Advanced Process Technology

l Surface Mount (IRF1010NS)

l Low-profilethrough-hole(IRF1010NL)

l 175°C Operating Temperature

l Fast Switching

V_DSS= 55V

R_DS(on)= 0.011W

l Fully Avalanche Rated

I_D= 84A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs

arewellknownfor, providesthedesignerwithanextremely

efficient and reliable device for use in a wide variety of

applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

Thethrough-holeversion(IRF1010NL)isavailableforlow-

profileapplications.

TO-262

Pak

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

290

3.8

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

170

1.1

Linear Derating Factor

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

360

Single Pulse Avalanche Energyꢀ

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

5.0

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

0.90

Units

°C/W

R_qJC

R_qJA

Junction-to-Ambient ( PCB Mounted,steady-state)**

www.irf.com

5/13/99

12 3 4 5 6 7...10

中文翻译

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与IRF1010NSTRL相关器件

型号	品牌	获取价格	描述	数据表
IRF1010NSTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
IRF1010NSTRR	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 55V V(BR)DSS \| 84A I(D) \| TO-263AB
IRF1010NSTRRPBF	INFINEON	获取价格	暂无描述
IRF1010S	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Met
IRF1010STRL	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Met
IRF1010STRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Met
IRF1010STRR	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Met
IRF1010STRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Met
IRF1010Z	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRF1010ZL	INFINEON	获取价格	AUTOMOTIVE MOSFET

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