Datasheet > 晶体管 > 功率场效应晶体管> IRF1010ZSTRR

IRF1010ZSTRR

更新时间： 2024-11-18 13:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	196K
描述
Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF1010ZSTRR 数据手册

PD - 91670

IRF1010E

HEXFET^®Power MOSFET

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

V_DSS= 60V

l 175°C Operating Temperature

l Fast Switching

R_DS(on)= 12mΩ

l Fully Avalanche Rated

I_D= 84A

Description

AdvancedHEXFET^®PowerMOSFETsfromInternational

Rectifierutilizeadvancedprocessingtechniquestoachieve

extremelylowon-resistancepersiliconarea. Thisbenefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

knownfor,providesthedesignerwithanextremelyefficient

andreliabledeviceforuseinawidevarietyofapplications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220 contribute

to its wide acceptance throughout the industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

330

P_D@T_C= 25°C

Power Dissipation

200

W/°C

Linear Derating Factor

1.4

V_GS

I_AR

Gate-to-Source Voltage

± 20

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

4.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.75

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

www.irf.com

3/16/01

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRF1010ZSTRR相关器件

型号	品牌	获取价格	描述	数据表
IRF1010ZSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Me
IRF1018E	INFINEON	获取价格	The StrongIRFET™ power MOSFET family is optim
IRF1018EPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF1018ES	INFINEON	获取价格	60V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装
IRF1018ESLPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF1018ESPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF1018ESTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Me
IRF103IPBF	INFINEON	获取价格	Adavanced Process Technology
IRF10N40	SUNTAC	获取价格	POWER MOSFET
IRF-11.010%	VISHAY	获取价格	General Fixed Inductor, 1 ELEMENT, 1 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR