品牌 | Logo | 应用领域 |
英飞凌 - INFINEON | / | |
页数 | 文件大小 | 规格书 |
12页 | 438K | |
描述 | ||
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. . |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF1018EPBF | INFINEON |
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HEXFET Power MOSFET | |
IRF1018ES | INFINEON |
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60V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装 | |
IRF1018ESLPBF | INFINEON |
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HEXFET Power MOSFET | |
IRF1018ESPBF | INFINEON |
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HEXFET Power MOSFET | |
IRF1018ESTRLPBF | INFINEON |
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Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Me | |
IRF103IPBF | INFINEON |
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Adavanced Process Technology | |
IRF10N40 | SUNTAC |
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POWER MOSFET | |
IRF-11.010% | VISHAY |
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General Fixed Inductor, 1 ELEMENT, 1 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR | |
IRF-11.0UH+-10%ERE2 | VISHAY |
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General Purpose Inductor, 1uH, 10%, Ferrite-Core, | |
IRF-11.2+/-10% | VISHAY |
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General Fixed Inductor, 1 ELEMENT, 1.2 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL L |