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IRF1010ZSTRRPBF PDF预览

IRF1010ZSTRRPBF

更新时间: 2024-11-21 20:01:07
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 405K
描述
Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

IRF1010ZSTRRPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, PLASTIC, D2PAK-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.03
其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE雪崩能效等级(Eas):130 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (Abs) (ID):75 A
最大漏极电流 (ID):75 A最大漏源导通电阻:0.0075 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):140 W最大脉冲漏极电流 (IDM):360 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF1010ZSTRRPBF 数据手册

 浏览型号IRF1010ZSTRRPBF的Datasheet PDF文件第2页浏览型号IRF1010ZSTRRPBF的Datasheet PDF文件第3页浏览型号IRF1010ZSTRRPBF的Datasheet PDF文件第4页浏览型号IRF1010ZSTRRPBF的Datasheet PDF文件第5页浏览型号IRF1010ZSTRRPBF的Datasheet PDF文件第6页浏览型号IRF1010ZSTRRPBF的Datasheet PDF文件第7页 
PD - 95361A  
IRF1010ZPbF  
IRF1010ZSPbF  
IRF1010ZLPbF  
Features  
l
l
l
l
l
l
Advanced Process Technology  
HEXFET® Power MOSFET  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free  
D
VDSS = 55V  
RDS(on) = 7.5mΩ  
G
Description  
ID = 75A  
ThisHEXFET® PowerMOSFETutilizesthelatest  
processing techniques to achieve extremely low  
on-resistancepersiliconarea.Additionalfeatures  
of this design are a 175°C junction operating  
temperature, fast switching speed and improved  
repetitive avalanche rating . These features  
combinetomakethisdesignanextremelyefficient  
and reliable device for use in a wide variety of  
applications.  
S
D2Pak  
IRF1010ZSPbF IRF1010ZLPbF  
TO-262  
TO-220AB  
IRF1010ZPbF  
Absolute Maximum Ratings  
Parameter  
Max.  
94  
Units  
(Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ T = 25°C  
C
D
D
D
@ T = 100°C  
C
66  
A
(Package Limited)  
@ T = 25°C  
C
75  
360  
140  
DM  
P
@T = 25°C  
Power Dissipation  
C
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
0.90  
± 20  
W/°C  
V
V
GS  
EAS (Thermally limited)  
130  
180  
mJ  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (Tested )  
IAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
EAR  
mJ  
T
J
Operating Junction and  
-55 to + 175  
T
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
1.11  
–––  
62  
Units  
°C/W  
Rθ  
JC  
Junction-to-Case  
Rθ  
Rθ  
Rθ  
0.50  
–––  
CS  
JA  
JA  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount)  
www.irf.com  
1
07/06/10  

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