Datasheet > IRF103IPBF

IRF103IPBF

更新时间： 2024-02-27 23:52:04

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	309K
描述
Adavanced Process Technology

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中文翻译

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数据手册

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IRF103IPBF 数据手册

PD -96085A

IRF7103IPbF

HEXFET^®Power MOSFET

l Adavanced Process Technology

l Ultra Low On-Resistance

l Dual N-Channel MOSFET

l Surface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Fast Switching

V_DSS= 50V

_DS(on)= 0.130Ω

I_D= 3.0A

Top View

l Lead-Free

Description

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

dual-die capability making it ideal in a variety of power

applications. With these improvements, multiple

devicescanbeusedinanapplicationwithdramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

SO-8

Absolute Maximum Ratings

Parameter

Max.

3.0

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

2.3

W/°C

P_D@T_A= 25°C

Power Dissipation

2.0

Linear Derating Factor

0.016

± 20

V_GS

Gate-to-Source Voltage

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

4.5

V/nS

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance Ratings

Parameter

Min.

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

62.5

°C/W

www.irf.com

02/09/10

12 3 4 5 6 7...9

中文翻译

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