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IRF1010NSTRRPBF PDF预览

IRF1010NSTRRPBF

更新时间: 2024-11-18 13:01:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 196K
描述
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IRF1010NSTRRPBF 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:5.01其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
雪崩能效等级(Eas):250 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (Abs) (ID):84 A最大漏极电流 (ID):75 A
最大漏源导通电阻:0.011 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):170 W最大脉冲漏极电流 (IDM):290 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF1010NSTRRPBF 数据手册

 浏览型号IRF1010NSTRRPBF的Datasheet PDF文件第2页浏览型号IRF1010NSTRRPBF的Datasheet PDF文件第3页浏览型号IRF1010NSTRRPBF的Datasheet PDF文件第4页浏览型号IRF1010NSTRRPBF的Datasheet PDF文件第5页浏览型号IRF1010NSTRRPBF的Datasheet PDF文件第6页浏览型号IRF1010NSTRRPBF的Datasheet PDF文件第7页 
PD - 91670  
IRF1010E  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
D
VDSS = 60V  
l 175°C Operating Temperature  
l Fast Switching  
RDS(on) = 12mΩ  
G
l Fully Avalanche Rated  
ID = 84A‡  
S
Description  
AdvancedHEXFET® PowerMOSFETsfromInternational  
Rectifierutilizeadvancedprocessingtechniquestoachieve  
extremelylowon-resistancepersiliconarea. Thisbenefit,  
combined with the fast switching speed and ruggedized  
device design that HEXFET power MOSFETs are well  
knownfor,providesthedesignerwithanextremelyefficient  
andreliabledeviceforuseinawidevarietyofapplications.  
The TO-220 package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 50 watts. The low thermal  
resistance and low package cost of the TO-220 contribute  
to its wide acceptance throughout the industry.  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
84‡  
59  
A
330  
PD @TC = 25°C  
Power Dissipation  
200  
W
W/°C  
V
Linear Derating Factor  
1.4  
VGS  
IAR  
Gate-to-Source Voltage  
± 20  
Avalanche Current  
50  
17  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
mJ  
V/ns  
4.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
0.75  
–––  
62  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
°C/W  
www.irf.com  
1
3/16/01  

IRF1010NSTRRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF1010NSTRLPBF INFINEON

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