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IRF1010NPBF

更新时间: 2024-11-01 04:23:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 183K
描述
HEXFET Power MOSFET

IRF1010NPBF 数据手册

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PD - 94966  
IRF1010NPbF  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
l 175°C Operating Temperature  
l Fast Switching  
D
VDSS = 55V  
RDS(on) = 11mΩ  
G
l Fully Avalanche Rated  
l Lead-Free  
ID = 85A‡  
S
Description  
AdvancedHEXFET® PowerMOSFETsfromInternational  
Rectifierutilizeadvancedprocessingtechniquestoachieve  
extremelylowon-resistancepersiliconarea. Thisbenefit,  
combined with the fast switching speed and ruggedized  
device design that HEXFET power MOSFETs are well  
knownfor,providesthedesignerwithanextremelyefficient  
andreliabledeviceforuseinawidevarietyofapplications.  
The TO-220 package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 50 watts. The low thermal  
resistance and low package cost of the TO-220 contribute  
to its wide acceptance throughout the industry.  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
85‡  
60  
A
290  
PD @TC = 25°C  
Power Dissipation  
180  
W
W/°C  
V
Linear Derating Factor  
1.2  
VGS  
IAR  
Gate-to-Source Voltage  
± 20  
Avalanche Current  
43  
18  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
mJ  
V/ns  
3.6  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
Typ.  
–––  
0.50  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
0.85  
–––  
62  
°C/W  
www.irf.com  
1
02/02/04  

IRF1010NPBF 替代型号

型号 品牌 替代类型 描述 数据表
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