Datasheet > IRF1010EZSTRR

IRF1010EZSTRR

更新时间： 2024-11-18 15:35:19

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
12页	398K
描述
Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

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IRF1010EZSTRR 数据手册

PD - 95483B

IRF1010EZPbF

AUTOMOTIVE MOSFET

IRF1010EZSPbF

IRF1010EZLPbF

HEXFET^®Power MOSFET

Features

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

V_DSS= 60V

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

R_DS(on)= 8.5mΩ

I_D= 75A

Description

SpecificallydesignedforAutomotiveapplications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistance per silicon area. Additional fea-

tures of this design are a 175°C junction operat-

ing temperature, fast switching speed and im-

proved repetitive avalanche rating . These fea-

tures combine to make this design an extremely

efficient and reliable device for use in Automotive

applications and a wide variety of other applica-

tions.

D²Pak

TO-262

TO-220AB

IRF1010EZPbF

IRF1010EZSPbF IRF1010EZLPbF

Absolute Maximum Ratings

Parameter

Max.

Units

@ T_C= 25°C

@ T_C= 100°C

@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (See Fig. 9)

(Package Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

340

140

@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

0.90

± 20

W/°C

Gate-to-Source Voltage

E_AS

180

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(tested)

I_AR

See Fig.12a,12b,15,16

E_AR

°C

Repetitive Avalanche Energy

-55 to + 175

Operating Junction and

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.11

–––

Units

°C/W

R_θ

Junction-to-Case

R_θ

0.50

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

–––

Junction-to-Ambient (PCB Mount, steady state)

HEXFET^®is a registered trademark of International Rectifier.

www.irf.com

09/17/09

12 3 4 5 6 7...12

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与IRF1010EZSTRR相关器件

型号	品牌	获取价格	描述	数据表
IRF1010EZSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Me
IRF1010N	INFINEON	获取价格	Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A
IRF1010NL	INFINEON	获取价格	Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=
IRF1010NLPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRF1010NPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF1010NPBF	KERSEMI	获取价格	Advanced Process Technology Ultra Low On-Resistance
IRF1010NS	INFINEON	获取价格	Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=
IRF1010NSPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRF1010NSTRL	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 55V V(BR)DSS \| 84A I(D) \| TO-263AB
IRF1010NSTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met

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