是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.69 |
雪崩能效等级(Eas): | 1228 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 80 V |
最大漏极电流 (ID): | 120 A | 最大漏源导通电阻: | 0.002 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 480 A |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPP020N08N5AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 120A I(D), 80V, 0.002ohm, 1-Element, N-Channel, Silicon, Me | |
IPP022N12NM6 | INFINEON |
获取价格 |
This is a normal level 120 V MOSFET in?TO-220 | |
IPP023N04N G | INFINEON |
获取价格 |
OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选,例如服务器和 | |
IPP023N04NG | INFINEON |
获取价格 |
OptiMOS?3 Power-Transistor | |
IPP023N04NGXKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 90A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Me | |
IPP023N08N5 | INFINEON |
获取价格 |
OptiMOS™ 5 80 V power MOSFET, especially desi | |
IPP023N08N5AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 120A I(D), 80V, 0.0023ohm, 1-Element, N-Channel, Silicon, M | |
IPP023N10N5 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 120A I(D), 100V, 0.0023ohm, 1-Element, N-Channel, Silicon, | |
IPP023N10N5AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 120A I(D), 100V, 0.0023ohm, 1-Element, N-Channel, Silicon, | |
IPP023NE7N3 G | INFINEON |
获取价格 |
75V OptiMOS?技术专注于同步整流应用。基于领先的80V技术,这些75V产品同时具 |