Datasheet > IPP027N08N5

IPP027N08N5

更新时间： 2024-09-14 11:15:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	1846K
描述
OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.

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IPP027N08N5 数据手册

MOSFET

MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor

OptiMOS^TM

OptiMOS^ª5ꢀPower-Transistor,ꢀ80ꢀV

IPP027N08N5

DataꢀSheet

Rev.ꢀ2.0

Final

PowerꢀManagementꢀ&ꢀMultimarket

12 3 4 5 6 7...12

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型号	品牌	获取价格	描述	数据表
IPP028N08N3 G	INFINEON	获取价格	OptiMOS™ 系列是高效率解决方案的市场领导者，适用于发电（例如太阳能微逆变器）、电源
IPP028N08N3G	INFINEON	获取价格	OptiMOS®3 Power-Transistor Features Excellent
IPP028N08N3GXKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 100A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, M
IPP029N06N	INFINEON	获取价格	New OptiMOSâ¢ 40V and 60V
IPP030N06NF2S	INFINEON	获取价格	英飞凌 StrongIRFET™ 2 60 V 功率 MOSFET 具备仅为 3.05 m
IPP030N10N3 G	INFINEON	获取价格	英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SM
IPP030N10N3G	INFINEON	获取价格	OptiMOS3 Power-Transistor
IPP030N10N3GXKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 100A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, M
IPP030N10N5	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, M
IPP030N10N5AKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, M