Datasheet > IPP030N10N3G

IPP030N10N3G

更新时间： 2024-09-13 11:08:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	312K
描述
OptiMOS3 Power-Transistor

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中文翻译

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IPP030N10N3G 数据手册

IPP030N10N3 G

IPI030N10N3 G

OptiMOS^®3 Power-Transistor

Product Summary

Features

V _DS

100

• N-channel, normal level

R _DS(on),max

I _D

mΩ

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

100

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target application

• Ideal for high-frequency switching and synchronous rectification

Type

IPP030N10N3 G

IPI030N10N3 G

Package

Marking

PG-TO220-3

030N10N

PG-TO262-3

030N10N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C²⁾

I _D

Continuous drain current

100

T _C=100 °C

Pulsed drain current²⁾

I _D,pulse

E _AS

T _C=25 °C

400

I _D=100 A, R _GS=25 Ω

Avalanche energy, single pulse

Gate source voltage

1000

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

300

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾J-STD20 and JESD22

²⁾See figure 3

Rev. 2.1

page 1

2008-10-02

12 3 4 5 6 7...10

中文翻译

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