5秒后页面跳转
IPP029N06N PDF预览

IPP029N06N

更新时间: 2024-09-13 12:50:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
2页 1021K
描述
New OptiMOS™ 40V and 60V

IPP029N06N 数据手册

 浏览型号IPP029N06N的Datasheet PDF文件第2页 
Product Brief  
Features  
„
Optimized for Synchronous  
Rectification  
New OptiMOS™ 40V and 60V  
„
Shrink Your Design and Boost Efficiency  
35% lower RDS(on) than  
alternative devices  
„
45% improvement of FOM  
over similar devices  
New OptiMOS™ 40V and 60V, Infineon’s latest generation of power MOSFETs,  
is optimized for Synchronous Rectification in switched mode power supplies  
(SMPS) such as those found in servers and desktops. In addition these devices  
are a perfect choice for a broad range of industrial applications including motor  
control, solar micro inverter and fast switching DC/DC converter.  
„
Integrated Schottky-like diode  
„
RoHS compliant - halogen free  
„
MSL1 rated  
Benefits  
„
Highest system efficiency  
New 40V and 60V product families, feature not only the industry’s lowest RDS(on)  
but also a perfect switching behavior for fast switching applications. 35%  
lower RDS(on) and 45% lower Figure of Merit (RDS(on) x Qg)compared to alternative  
devices has been realized by advanced thin wafer technology.  
„
Less paralleling required  
„
Increased power density  
„
System cost reduction  
„
Very low voltage overshoot  
The fast growing market of solar micro inverter requires ever higher  
performance levels of components. In typical photovoltaic topologies both  
RDS(on) and switching characteristics are equally important. In a micro inverter  
1.5% higher efficiency can be achieved at a 20% load condition by using  
BSC016N06NS (1.6mΩ SuperSO8 (5mmx6mm) 60V device).  
Applications  
„
Synchronous Rectification  
„
Solar micro inverter  
„
Isolated DC/DC converters  
„
Motor control for 12-48V systems  
„
Or-ing switches  
40V SuperSO8  
60V SuperSO8  
2
1
0
2
1
0
Existing OptiMOS™ 40V  
New Generation 40V  
Existing OptiMOS™ 60V  
New Generation 60V  
-41%  
-48%  
40V  
60V  
www.infineon.com/newoptimos  

与IPP029N06N相关器件

型号 品牌 获取价格 描述 数据表
IPP030N06NF2S INFINEON

获取价格

英飞凌 StrongIRFET™ 2 60 V 功率 MOSFET 具备仅为 3.05 m
IPP030N10N3 G INFINEON

获取价格

英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SM
IPP030N10N3G INFINEON

获取价格

OptiMOS3 Power-Transistor
IPP030N10N3GXKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 100A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, M
IPP030N10N5 INFINEON

获取价格

Power Field-Effect Transistor, 120A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, M
IPP030N10N5AKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 120A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, M
IPP032N06N3 G INFINEON

获取价格

OptiMOS ™ 60V 是交换模式电源 (SMPS)中的同步整流的理想之选,例如服务器
IPP032N06N3G INFINEON

获取价格

OptiMOS™3 Power-Transistor Features Ideal for
IPP032N06N3GXKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, M
IPP033N04NF2S INFINEON

获取价格

英飞凌 StrongIRFET? 2 40 V 功率 MOSFET 具备仅为 3.3 mΩ