5秒后页面跳转
IPP034N03LG PDF预览

IPP034N03LG

更新时间: 2024-09-15 11:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 275K
描述
OptiMOS?3 Power-Transistor

IPP034N03LG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:GREEN, PLASTIC, TO-220, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.69其他特性:AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
雪崩能效等级(Eas):70 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):80 A
最大漏极电流 (ID):80 A最大漏源导通电阻:0.0047 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):94 W
最大脉冲漏极电流 (IDM):400 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IPP034N03LG 数据手册

 浏览型号IPP034N03LG的Datasheet PDF文件第2页浏览型号IPP034N03LG的Datasheet PDF文件第3页浏览型号IPP034N03LG的Datasheet PDF文件第4页浏览型号IPP034N03LG的Datasheet PDF文件第5页浏览型号IPP034N03LG的Datasheet PDF文件第6页浏览型号IPP034N03LG的Datasheet PDF文件第7页 
IPP034N03L G  
IPB034N03L G  
OptiMOS3 Power-Transistor  
Product Summary  
Features  
V DS  
30  
3.4  
80  
V
• Fast switching MOSFET for SMPS  
R DS(on),max  
I D  
m  
A
• Optimized technology for DC/DC converters  
• Qualified according to JEDEC1) for target applications  
• N-channel, logic level  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
• Avalanche rated  
• Pb-free plating; RoHS compliant  
• Halogen-free according to IEC61249-2-21  
Type  
IPP034N03L G  
IPB034N03L G  
Package  
Marking  
PG-TO220-3-1  
034N03L  
PG-TO263-3  
034N03L  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
V GS=10 V, T C=25 °C  
V GS=10 V, T C=100 °C  
V GS=4.5 V, T C=25 °C  
GS=4.5 V,  
Continuous drain current  
80  
80  
A
80  
77  
V
T C=100 °C  
Pulsed drain current2)  
I D,pulse  
I AS  
T C=25 °C  
400  
80  
Avalanche current, single pulse3)  
Avalanche energy, single pulse  
T C=25 °C  
E AS  
I D=80 A, R GS=25 Ω  
70  
mJ  
I D=80 A, V DS=24 V,  
di /dt =200 A/µs,  
T j,max=175 °C  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
V
V GS  
Gate source voltage  
1) J-STD20 and JESD22  
±20  
Rev. 2.0  
page 1  
2010-02-19  

IPP034N03LG 替代型号

型号 品牌 替代类型 描述 数据表
IPP03N03LBG INFINEON

功能相似

OptiMOS㈢2 Power-Transistor

与IPP034N03LG相关器件

型号 品牌 获取价格 描述 数据表
IPP034N03LGXKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Me
IPP034N08N5 INFINEON

获取价格

OptiMOS™ 5 80 V power MOSFET, especially desi
IPP034NE7N3 G INFINEON

获取价格

75V OptiMOS™技术专注于同步整流应用。基于领先的80V技术,这些75V产品同时具
IPP034NE7N3G INFINEON

获取价格

OptiMOSTM3 Power-Transistor Features Optimized technology for synchronous rectification
IPP034NE7N3GXKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, M
IPP037N06L3G INFINEON

获取价格

Power Field-Effect Transistor, 90A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Me
IPP037N06L3GXKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 90A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Me
IPP037N08N3 G INFINEON

获取价格

OptiMOS™ 系列是高效率解决方案的市场领导者,适用于发电(例如太阳能微逆变器)、电源
IPP037N08N3G INFINEON

获取价格

OptiMOS3 Power-Transistor
IPP039N04LG INFINEON

获取价格

OptiMOS3 Power-Transistor